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FGY100T65SCDT

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2017
October, 2017 − Rev. 2
1 Publication Order Number:
FGY100T65SCDT/D
FGY100T65SCDT
650 V, 100 A Field Stop
Trench IGBT
Short Circuit Rated IGBT
General Description
Using novel field stop IGBT technology, ON Semiconductor’s new
series of field stop 3
rd
generation IGBTs offer the optimum
performance for solar, UPS, motor control, ESS and HVAC
applications where low conduction and switching losses are essential.
Features
• Maximum Junction Temperature: T
J
= 175°C
• Positive Temperature Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: V
CE(sat)
= 1.5 V (Typ.) @ I
C
= 100 A
• High Input Impedance
• Fast Switching
• Short Cirruit Rated 5 ms
• Tighten Parameter Distribution
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Solar, UPS, Motor Control, ESS, HVAC
ABSOLUTE MAXIMUM RATINGS (at T
C
= 25°C, Unless otherwise specified)
Symbol
Parameter Value Unit
V
CES
Collector to Emitter Voltage 650 V
V
GES
Gate to Emitter Voltage ±25 V
Transient Gate to Emitter Voltage ±30 V
I
C
Collector Current @ T
C
= 25°C 200 A
Collector Current @ T
C
= 100°C 100 A
I
LM
(Note 1) Clamped Inductive Load Current @ T
C
= 25°C 300 A
I
CM
(Note 2) Pulsed Collector Current 300 A
I
F
Diode Forward Current
@ T
C
= 25°C
@ T
C
= 100°C
200
100
A
I
FM
(Note 2) Pulsed Diode Maximum Forward Current 300 A
P
D
Maximum Power Dissipation @ T
C
= 25°C 750 W
Maximum Power Dissipation @ T
C
= 100°C 375 W
T
J
Operating Junction Temperature −55 to +175 °C
T
stg
Storage Temperature Range −55 to +175 °C
T
L
Maximum Lead Temp. for Soldering Purposes, 1/8″ from Case for 5 seconds 300 °C
T
SC
(Note 3) Short circuit withstanding time @ T
C
= 150°C 5
ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. V
CC
= 400 V, V
GE
= 15 V, I
C
= 375 A, R
G
= 10 W, Inductive Load.
2. Repetitive rating: Pulse width limited by max. junction temperature.
3. Test condition: V
GE
= 15 V, V
CC
= 400 V.
TO−247
CASE 340CD
See detailed ordering and shipping information on page 3 o
f
this data sheet.
ORDERING INFORMATION
www.onsemi.com
C
E
G
FGY100T65SCDT
www.onsemi.com
2
THERMAL CHARACTERISTICS
Symbol Parameter Value Unit
R
q
JC
(IGBT)
Thermal Resistance, Junction to Case, Max. 0.2
_C/W
R
q
JC
(Diode)
Thermal Resistance, Junction to Case, Max. 0.3
_C/W
R
q
JA
Thermal Resistance, Junction to Ambient, Max. 40
_C/W
ELECTRICAL CHARACTERISTICS OF THE IGBT (T
C
= 25°C unless otherwise noted)
Symbol
Parameter Test Conditions Min Typ Max Unit
OFF CHARACTERISTICS
BV
CES
Collector to Emitter Breakdown
Voltage
V
GE
=0V, I
C
=1mA 650 − − V
DBV
CES
/
DT
J
Temperature Coefficient of
Breakdown Voltage
I
C
= 1 mA, Reference to 25_C
− 0.56 −
V/_C
I
CES
Collector Cut-Off Current V
CE
=V
CES
, V
GE
=0V − − 250
mA
I
GES
G−E Leakage Current V
GE
=V
GES
, V
CE
=0V − − ±400 nA
ON CHARACTERISTICS
V
GE(th)
G−E Threshold Voltage I
C
= 100 mA, V
CE
=V
GE
3.5 5.3 6.9 V
V
CE(sat)
Collector to Emitter Saturation
Voltage
I
C
= 100 A, V
GE
=15V − 1.5 1.9 V
I
C
= 100 A, V
GE
=15V,
T
C
= 175_C
− 1.97 − V
DYNAMIC CHARACTERISTICS
C
ies
Input Capacitance
V
CE
=30V
,
V
GE
=0V,
f = 1 MHz
− 6310 − pF
C
oes
Output Capacitance − 384 − pF
C
res
Reverse Transfer Capacitance − 46 − pF
SWITCHING CHARACTERISTICS
t
d(on)
Turn-On Delay Time
V
CC
= 400 V, I
C
= 100 A,
R
G
= 4.7 W, V
GE
=15V,
Inductive Load, T
C
=25_C
− 84 − ns
t
r
Rise Time − 147 − ns
t
d(off)
Turn-Off Delay Time − 216 − ns
t
f
Fall Time − 133 − ns
E
on
Turn-On Switching Loss − 5.4 − mJ
E
off
Turn-Off Switching Loss − 3.8 − mJ
E
ts
Total Switching Loss − 9.2 − mJ
t
d(on)
Turn-On Delay Time
V
CC
= 400 V, I
C
= 100 A,
R
G
= 4.7 W, V
GE
=15V,
Inductive Load, T
C
= 175_C
− 80 − ns
t
r
Rise Time − 160 − ns
t
d(off)
Turn-Off Delay Time − 244 − ns
t
f
Fall Time − 166 − ns
E
on
Turn-On Switching Loss − 9.7 − mJ
E
off
Turn-Off Switching Loss − 5.2 − mJ
E
ts
Total Switching Loss − 14.9 − mJ
Q
g
Total Gate Charge
V
CE
= 400 V, I
C
= 100 A,
V
GE
=15V
− 157 − nC
Q
ge
Gate to Emitter Charge − 43 − nC
Q
gc
Gate to Collector Charge − 46 − nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
FGY100T65SCDT
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS OF THE DIODE (T
C
= 25°C unless otherwise noted)
Symbol
Parameter Test Conditions Min Typ Max Unit
V
FM
Diode Forward Voltage I
F
= 100 A
T
C
=25_C
T
C
= 175_C
−
−
1.68
1.45
2.1
−
V
E
rec
Reverse Recovery Energy
I
F
= 100 A, dI
F
/dt = 200 A/ms,
T
C
= 175_C
− 96 −
mJ
t
rr
Diode Reverse Recovery Time
I
F
= 100 A, dI
F
/dt = 200 A/ms
T
C
=25_C
T
C
= 175_C
−
−
62
251
−
−
ns
Q
rr
Diode Reverse Recovery Charge
I
F
= 100 A, dI
F
/dt = 200 A/ms
T
C
=25_C
T
C
= 175_C
−
−
164
2736
−
−
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PACKAGE MARKING AND ORDERING INFORMATION
Pare Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FGY100T65SCDT FGY100T65SCDT TO−247H03 Tube − − 30
P1-P3P4-P6P7-P8

FGY100T65SCDT

Mfr. #:
Buy FGY100T65SCDT
Manufacturer:
ON Semiconductor
Description:
IGBT Transistors FS3TIGBT TO247 100A 650V
Lifecycle:
New from this manufacturer.
Delivery:
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