FGY100T65SCDT

FGY100T65SCDT
www.onsemi.com
4
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Saturation Voltage vs. Case
Temperature at Variant Current Level
Figure 5. Saturation Voltage vs. V
GE
Figure 6. Saturation Voltage vs. V
GE
0
0
50
100
150
200
250
300
20V
T
C
= 25
o
C
15V
12V
10V
V
GE
= 8V
Collector Current, I
C
[A]
Collector−Emitter Voltage, V
CE
[V]
0
50
100
150
200
250
300
T
C
= 175
o
C
Collector Current, I
C
[A]
Collector−Emitter Voltage, V
CE
[V]
20V
15V
12V
10V
V
GE
= 8V
12 34 5 6
0123456
0
50
100
150
200
250
300
Common Emitter
V
GE
= 15V
T
C
= 25
o
C
T
C
= 175
o
C
Collector Current, I
C
[A]
Collector−Emitter Voltage, V
CE
[V]
012345
−100 −50 0 50 100 150 200
1
2
3
4
200A
100A
I
C
= 50A
Common Emitter
V
GE
= 15V
Collector−Emitter Voltage, V
CE
[V]
Collector−Emitter Case Temperature, T
C
[
o
C]
0
4
8
12
16
20
I
C
= 50A
200A
100A
Common Emitter
T
C
= 25
o
C
Collector−Emitter Voltage, V
CE
[V]
Gate−Emitter Voltage, V
GE
[V]
4 8 12 16 20
4 8 121620
0
4
8
12
16
20
Common Emitter
T
C
= 175
o
C
Collector−Emitter Voltage, V
CE
[V]
Gate−Emitter Voltage, V
GE
[V]
I
C
= 50A
100A
200A
FGY100T65SCDT
www.onsemi.com
5
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Figure 7. Capacitance Characteristics Figure 8. Gate Charge Characteristics
Figure 9. Turn-on Characteristics vs. Gate
Resistance
Figure 10. Turn-off Characteristics vs. Gate
Resistance
Figure 11. Switching Loss vs. Gate
Resistance
Figure 12. Turn-on Characteristics vs.
Collector Current
110
10
100
1000
10000
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
o
C
C
res
C
oes
C
ies
Capacitance [pF]
Collector−Emitter Voltage, V
CE
[V]
30
0
0
3
6
9
12
15
Common Emitter
T
C
= 25
o
C
300V
400V
V
CC
= 200V
Gate−Emitter Voltage, V
GE
[V]
Gate Charge, Q
g
[nC]
40 80 120 160 200
0 1020304050
50
100
1000
Common Emitter
V
CC
= 400V, V
GE
= 15V
I
C
= 100A
T
C
= 25
o
C
T
C
= 175
o
C
t
d(on)
t
r
Switching Time [ns]
Gate Resistance, R
G
[]
0 1020304050
100
1000
Common Emitter
V
CC
= 400V, V
GE
= 15V
I
C
= 100A
T
C
= 25
o
C
T
C
= 175
o
C
t
d(off)
t
f
Switching Time [ns]
Gate Resistance, R
G
[]
0 1020304050
1
10
30
Common Emitter
V
CC
= 400V, V
GE
= 15V
I
C
= 100A
T
C
= 25
o
C
T
C
= 175
o
C
E
on
E
off
Switching Loss [mJ]
Gate Resistance, R
G
[ ]
0 50 100 150 200
10
100
1000
Common Emitter
V
GE
= 15V, R
G
= 4.7
T
C
= 25
o
C
T
C
= 175
o
C
t
r
t
d(on)
Switching Time [ns]
Collector Current, I
C
[A]
W
W
W
W
FGY100T65SCDT
www.onsemi.com
6
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Figure 13. Turn-off Characteristics vs.
Collector Current
Figure 14. Switching Loss vs. Collector
Current
Figure 15. Load Current vs. Frequency Figure 16. SOA Characteristics
Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current
0
50
100
1000
Common Emitter
V
GE
= 15V, R
G
= 4.7
T
C
= 25
o
C
T
C
= 175
o
C
t
d(off)
t
f
Switching Time [ns]
Collector Current, I
C
[A]
50 100 150 200
0.5
1
10
100
Common Emitter
V
GE
= 15V, R
G
= 4.7
T
C
= 25
o
C
T
C
= 175
o
C
E
on
E
off
Switching Loss [mJ]
Collector Current, I
C
[A]
0 50 100 150 200
W
W
1k
0
90
180
270
360
450
T
C
= 75
o
C
T
C
= 25
o
C
T
C
= 100
o
C
Square Wave
T
J
<= 175
o
C, D = 0.5, V
CE
= 400V
V
GE
= 15/0V, R
G
= 4.7
Collector Current, [A]
Switching Frequency, f [Hz]
10k 100k 1M
W
0123
1
10
100
300
T
C
= 25
o
C
T
C
= 25
o
C
T
C
= 175
o
C
T
C
= 175
o
C
Forward Voltage, V
F
[V]
Forward Current, I
F
[A]
0
0
5
10
15
20
25
30
T
C
= 25
o
C
T
C
= 175
o
C −−−
di/dt = 100 A/
di/dt = 200 A/
di/dt = 100 A/
di/dt = 200 A/
Reverse Recovery Currnet, I
rr
[A]
Forward Current, I
F
[A]
40 80 120 160
1
0.1
1
10
100
500
1ms
10 ms
DC
*Notes:
1. T
C
= 25
o
C
2. T
J
= 175
o
C
3. Single Pulse
10
100
s
Collector Current, I
c
[A]
Collector−Emitter Voltage, V
CE
[V]
10 100 1000
m
m
s
m
s
m
s
m
s
ms

FGY100T65SCDT

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
IGBT Transistors FS3TIGBT TO247 100A 650V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet