FGY100T65SCDT

FGY100T65SCDT
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7
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Figure 19. Reverse Recovery Time Figure 20. Stored Charge
Figure 21. Transient Thermal Impedance of IGBT
0
80
160
240
320
400
T
C
= 25
o
C
T
C
= 175
o
C ---
di/dt = 200 A/
di/dt = 100 A/
Reverse Recovery Time, t
rr
[ns]
Forward Current, I
F
[A]
0 40 80 120 160
0 40 80 120 160
0
700
1400
2100
2800
3500
T
C
= 25
o
C
T
C
= 175
o
C −−−
di/dt = 200 A/
di/dt = 100 A/
Stored Recovery Charge, Q
rr
[nC]
Forward Current, I
F
[A]
10
−5
10
−4
10
−3
10
−2
10
−1
10
0
0.003
0.01
0.1
0.4
0.01
0.02
0.1
0.05
0.2
single pulse
Thermal Response [Zthjc]
Rectangular Pulse Duration [sec]
Duty Factor, D = t1/t2
Peak T
j
= Pdm x Zthjc + T
C
0.5
t
1
P
DM
t
2
10
−5
10
−4
10
−3
10
−2
10
−1
10
0
0.01
0.1
0.4
0.01
0.02
0.1
0.05
0.2
single pulse
Thermal Response [Zthjc]
Rectangular Pulse Duration [sec]
Duty Factor, D = t1/t2
Peak T
j
= Pdm x Zthjc + T
C
0.5
t
1
P
DM
t
2
Figure 22. Transient Thermal Impedance of Diode
m
s
m
s
ms
ms
FGY100T65SCDT
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8
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CD
ISSUE O
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FGY100T65SCDT

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IGBT Transistors FS3TIGBT TO247 100A 650V
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