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(11) When six address cycles are input
Although the device may read in a sixth address, it is ignored inside the chip.
Read operation
Program operation
CLE
Address input
00h
CE
WE
ALE
I/O
BY/RY
Ignored
30h
CLE
CE
WE
ALE
I/O
Address input
Ignored
80h
Data input
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(12) Several programming cycles on the same page (Partial Page Program)
Each segment can be programmed individually as follows:
Data Pattern 4
Data Pattern 1
All 1 s
All 1 s All 1 s
All 1 s
1st programming
2nd programming
4th programming
Result
Data Pattern 1 Data Pattern 2
Data Pattern 4
Data Pattern 2
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(13) Invalid blocks (bad blocks)
The device occasionally contains unusable blocks. Therefore, the following issues must be recognized:
Please do not perform an erase operation to bad blocks. It may be
impossible to recover the bad block information if the information is
erased.
Check if the device has any bad blocks after installation into the system.
Refer to the test flow for bad block detection. Bad blocks which are
detected by the test flow must be managed as unusable blocks by the
system.
A bad block does not affect the performance of good blocks because it is
isolated from the bit lines by select gates.
The number of valid blocks over the device lifetime is as follows:
MIN TYP. MAX UNIT
Valid (Good) Block Number 2008 2048 Block
Bad Block Test Flow
Regarding invalid blocks, bad block mark is in whole pages.
Please read one column of any page in each block. If the data of the column is 00(Hex), define the block as a bad
block.
*1: No erase operation is allowed to detected bad blocks
Bad Block
Bad Block
Pass
Read Check
Start
Bad Block *1
Last Block
End
Yes
Fail
Block No = 1
No
Block No. = Block No. + 1

TC58NVG2S0HTAI0

Mfr. #:
Manufacturer:
Toshiba Memory
Description:
NAND Flash 3.3V 4Gb 24nm I-Temp SLC NAND (EEPROM)
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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