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SQ1563AEH-T1_GE3

P1-P3P4-P6P7-P9P10-P12P13-P15
SQ1563AEH
www.vishay.com
Vishay Siliconix
S16-2472-Rev. B, 12-Dec-16
4
Document Number: 62986
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-CHANNEL TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0.0
0.4
0.8
1.2
1.6
2.0
0.0 0.2 0.4 0.6 0.8 1.0
I
D
- Drain Current (A)
V
DS
-Drain-to-Source Voltage (V)
V
GS
= 5 V thru
V
GS
= 1 V
V
GS
= 1.5 V
0.0
0.1
0.2
0.3
0.4
0.5
0.00.40.81.21.62.0
R
DS(on)
-On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 2.5 V
V
GS
= 1.8 V
V
GS
= 4.5 V
0
1
2
3
4
5
0.0 0.2 0.4 0.6 0.8 1.0
V
GS
- Gate-to-Source Voltage (V)
Q
g
-Total Gate Charge (nC)
I
D
= 0.85 A
V
DS
= 10 V
0.0
0.4
0.8
1.2
1.6
2.0
0.0 0.5 1.0 1.5 2.0 2.5
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= - 55 °C
T
C
= 125 °C
T
C
= 25 °C
0
20
40
60
80
100
0 5 10 15 20
C - Capacitance (pF)
V
DS
-Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
0.5
0.8
1.1
1.4
1.7
2.0
- 50 - 25 0 25 50 75 100 125 150 175
R
DS(on)
-On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
I
D
= 0.85 A
V
GS
= 4.5 V
V
GS
= 2.5 V
SQ1563AEH
www.vishay.com
Vishay Siliconix
S16-2472-Rev. B, 12-Dec-16
5
Document Number: 62986
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-CHANNEL TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Source Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
Safe Operating Area
0.001
0.01
0.1
1
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 25 °C
T
J
= 150 °C
- 0.5
- 0.3
- 0.1
0.1
0.3
0.5
- 50 - 25 0 25 50 75 100 125 150 175
V
GS(th)
Variance (V)
T
J
- Temperature (°C)
I
D
= 250 μA
I
D
= 5 mA
0.0
0.2
0.4
0.6
0.8
1.0
012345
R
DS(on)
-On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
20
22
24
26
28
30
- 50 - 25 0 25 50 75 100 125 150 175
V
DS
-Drain-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
I
D
= 1 mA
0.01
0.1
1
10
0.01 0.1 1 10 100
I
D
- Drain Current (A)
V
DS
-Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
100 ms
Limited by R
DS(on)
*
1 ms
I
DM
Limited
T
C
= 25 °C
Single Pulse
BVDSS Limited
10 ms
1 s, 10 s, DC
I
D
Limited
SQ1563AEH
www.vishay.com
Vishay Siliconix
S16-2472-Rev. B, 12-Dec-16
6
Document Number: 62986
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-CHANNEL THERMAL RATINGS (T
A
= 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
10
-3
10
-2
11010
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
0.02
P1-P3P4-P6P7-P9P10-P12P13-P15

SQ1563AEH-T1_GE3

Mfr. #:
Buy SQ1563AEH-T1_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET N Ch 20Vds 8Vgs AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
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