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AD8032BRZ

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20
AD8031/AD8032 Data Sheet
Rev. G | Page 4 of 20
+5 V SUPPLY
@ T
A
= 25°C, V
S
= 5 V, R
L
= 1 kΩ to 2.5 V, R
F
= 2.5 kΩ, unless otherwise noted.
Table 2.
AD8031A/AD8032A AD8031B/AD8032B
Parameter Conditions Min Typ Max Min Typ Max Unit
DYNAMIC PERFORMANCE
−3 dB Small Signal Bandwidth G = +1, V
O
< 0.4 V p-p 54 80 54 80 MHz
Slew Rate G = −1, V
O
= 2 V step 27 32 27 32 V/µs
Settling Time to 0.1%
G = −1, V
O
= 2 V step, C
L
= 10 pF
125
125
ns
DISTORTION/NOISE PERFORMANCE
Total Harmonic Distortion f
C
= 1 MHz, V
O
= 2 V p-p, G = +2 −62 −62 dBc
f
C
= 100 kHz, V
O
= 2 V p-p, G = +2 −86 −86 dBc
Input Voltage Noise f = 1 kHz 15 15 nV/√Hz
Input Current Noise f = 100 kHz 0.4 0.4 pA/√Hz
f = 1 kHz 5 5 pA/√Hz
Differential Gain R
L
= 1 kΩ 0.17 0.17 %
Differential Phase R
L
= 1 kΩ 0.11 0.11 Degrees
Crosstalk (AD8032 Only) f = 5 MHz −60 −60 dB
DC PERFORMANCE
Input Offset Voltage
V
CM
= V
CC
/2; V
OUT
= 2.5 V
±1
±6
±0.5
±1.5
mV
T
MIN
to T
MAX
±6 ±10 ±1.6 ±2.5 mV
Offset Drift V
CM
= V
CC
/2; V
OUT
= 2.5 V 5 5 µV/°C
Input Bias Current V
CM
= V
CC
/2; V
OUT
= 2.5 V 0.45 1.2 0.45 1.2 µA
T
MIN
to T
MAX
2.0 2.0 µA
Input Offset Current 50 350 50 250 nA
Open-Loop Gain V
CM
= V
CC
/2; V
OUT
= 1.5 V to 3.5 V 76 82 76 82 dB
T
MIN
to T
MAX
74 74 dB
INPUT CHARACTERISTICS
Common-Mode Input Resistance
40
40
MΩ
Differential Input Resistance 280 280 kΩ
Input Capacitance 1.6 1.6 pF
Input Voltage Range −0.5 to
+5.5
−0.5 to
+5.5
V
Input Common-Mode Voltage Range −0.2 to
+5.2
−0.2 to
+5.2
V
Common-Mode Rejection Ratio V
CM
= 0 V to 5 V 56 70 56 70 dB
V
CM
= 0 V to 3.8 V 66 80 66 80 dB
Differential Input Voltage 3.4 3.4 V
OUTPUT CHARACTERISTICS
Output Voltage Swing Low R
L
= 10 kΩ 0.05 0.02 0.05 0.02 V
Output Voltage Swing High 4.95 4.98 4.95 4.98 V
Output Voltage Swing Low R
L
= 1 kΩ 0.2 0.1 0.2 0.1 V
Output Voltage Swing High 4.8 4.9 4.8 4.9 V
Output Current 15 15 mA
Short Circuit Current Sourcing 28 28 mA
Sinking −46 −46 mA
Capacitive Load Drive G = +2 (See Figure 46) 15 15 pF
POWER SUPPLY
Operating Range 2.7 12 2.7 12 V
Quiescent Current per Amplifier
800
1400
800
1400
µA
Power Supply Rejection Ratio V
S
− = 0 V to −1 V or
V
S
+ = +5 V to +6 V
75 86 75 86 dB
Data Sheet AD8031/AD8032
Rev. G | Page 5 of 20
±5 V SUPPLY
@ T
A
= 25°C, V
S
= ±5 V, R
L
= 1 kΩ t o 0 V, R
F
= 2.5 kΩ, unless otherwise noted.
Table 3.
AD8031A/AD8032A AD8031B/AD8032B
Parameter Conditions Min Typ Max Min Typ Max Unit
DYNAMIC PERFORMANCE
−3 dB Small Signal Bandwidth G = +1, V
O
< 0.4 V p-p 54 80 54 80 MHz
Slew Rate G = −1, V
O
= 2 V step 30 35 30 35 V/µs
Settling Time to 0.1%
G = −1, V
O
= 2 V step, C
L
= 10 pF
125
125
ns
DISTORTION/NOISE PERFORMANCE
Total Harmonic Distortion f
C
= 1 MHz, V
O
= 2 V p-p, G = +2 −62 −62 dBc
f
C
= 100 kHz, V
O
= 2 V p-p, G = +2 −86 −86 dBc
Input Voltage Noise f = 1 kHz 15 15 nV/√Hz
Input Current Noise f = 100 kHz 0.4 0.4 pA/√Hz
f = 1 kHz 5 5 pA/√Hz
Differential Gain R
L
= 1 kΩ 0.15 0.15 %
Differential Phase R
L
= 1 kΩ 0.15 0.15 Degrees
Crosstalk (AD8032 Only) f = 5 MHz −60 −60 dB
DC PERFORMANCE
Input Offset Voltage
V
CM
= 0 V; V
OUT
= 0 V
±1
±6
±0.5
±1.5
mV
T
MIN
to T
MAX
±6 ±10 ±1.6 ±2.5 mV
Offset Drift V
CM
= 0 V; V
OUT
= 0 V 5 5 µV/°C
Input Bias Current V
CM
= 0 V; V
OUT
= 0 V 0.45 1.2 0.45 1.2 µA
T
MIN
to T
MAX
2.0 2.0 µA
Input Offset Current 50 350 50 250 nA
Open-Loop Gain V
CM
= 0 V; V
OUT
= ±2 V 76 80 76 80 dB
T
MIN
to T
MAX
74 74 dB
INPUT CHARACTERISTICS
Common-Mode Input Resistance
40
40
MΩ
Differential Input Resistance 280 280 kΩ
Input Capacitance 1.6 1.6 pF
Input Voltage Range −5.5 to
+5.5
−5.5 to
+5.5
V
Input Common-Mode Voltage Range −5.2 to
+5.2
−5.2 to
+5.2
V
Common-Mode Rejection Ratio V
CM
= −5 V to +5 V 60 80 60 80 dB
V
CM
= −5 V to +3.5 V 66 90 66 90 dB
Differential/Input Voltage 3.4 3.4 V
OUTPUT CHARACTERISTICS
Output Voltage Swing Low R
L
= 10 kΩ −4.94 −4.98 −4.94 −4.98 V
Output Voltage Swing High +4.94 +4.98 +4.94 +4.98 V
Output Voltage Swing Low R
L
= 1 kΩ −4.7 −4.85 −4.7 −4.85 V
Output Voltage Swing High +4.7 +4.75 +4.7 +4.75 V
Output Current 15 15 mA
Short Circuit Current Sourcing 35 35 mA
Sinking −50 −50 mA
Capacitive Load Drive G = +2 (See Figure 46) 15 15 pF
POWER SUPPLY
Operating Range ±1.35 ±6 ±1.35 ±6 V
Quiescent Current per Amplifier
900
1600
900
1600
µA
Power Supply Rejection Ratio V
S
− = −5 V to −6 V or
V
S
+ = +5 V to +6 V
76 86 76 86 dB
AD8031/AD8032 Data Sheet
Rev. G | Page 6 of 20
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter Rating
Supply Voltage 12.6 V
Internal Power Dissipation
1
8-Lead PDIP (N) 1.3 W
8-Lead SOIC_N (R) 0.8 W
8-Lead MSOP (RM) 0.6 W
5-Lead SOT-23 (RJ)
0.5 W
Input Voltage (Common Mode) ±V
S
± 0.5 V
Differential Input Voltage ±3.4 V
Output Short-Circuit Duration Observe Power
Derating Curves
Storage Temperature Range (N, R, RM, RJ) −65°C to +125°C
Lead Temperature (Soldering 10 sec) 300°C
1
Specification is for the device in free air:
8-Lead PDIP: θ
JA
= 90°C/W.
8-Lead SOIC_N: θ
JA
= 155°C/W.
8-Lead MSOP: θ
JA
= 200°C/W.
5-Lead SOT-23: θ
JA
= 240°C/W.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8031/AD8032 is limited by the associated rise in junction
temperature. The maximum safe junction temperature for
plastic encapsulated devices is determined by the glass
transition temperature of the plastic, approximately 150°C.
Exceeding this limit temporarily can cause a shift in parametric
performance due to a change in the stresses exerted on the die
by the package. Exceeding a junction temperature of 175°C for
an extended period can result in device failure.
While the AD8031/AD8032 are internally short-circuit
protected, this may not be sufficient to guarantee that the
maximum junction temperature (150°C) is not exceeded under
all conditions. To ensure proper operation, it is necessary to
observe the maximum power derating curves shown in Figure 7.
2.0
1.5
0
MAXIMUM POWER DISSIPATION (W)
1.0
0.5
5-LEAD SOT-23
T
J
= +150°C
8-LEAD PDIP
8-LEAD SOIC
AMBIENT TEMPERATURE (°C)
8-LEAD MSOP
–50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90
01056-007
Figure 7. Maximum Power Dissipation vs. Temperature
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the
human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent
damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20

AD8032BRZ

Mfr. #:
Buy AD8032BRZ
Manufacturer:
Analog Devices Inc.
Description:
Operational Amplifiers - Op Amps 2.7V 800uA 80Mhz RRIO Dual
Lifecycle:
New from this manufacturer.
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