SST25PF040B
DS20005134B-page 16 2014 Microchip Technology Inc.
4.4.15 JEDEC READ-ID
The JEDEC Read-ID instruction identifies the device as
SST25PF040B and the manufacturer as Microchip.
The device information can be read from executing the
8-bit command, 9FH. Following the JEDEC Read-ID
instruction, the 8-bit manufacturer’s ID, BFH, is output
from the device. After that, a 16-bit device ID is shifted
out on the SO pin. Byte 1, BFH, identifies the manufac-
turer as Microchip. Byte 2, 25H, identifies the memory
type as SPI Serial Flash. Byte 3, 8DH, identifies the
device as SST25PF040B. The instruction sequence is
shown in Figure 4-18. The JEDEC Read ID instruction
is terminated by a low to high transition on CE# at any
time during data output.
FIGURE 4-18: JEDEC READ-ID SEQUENCE
4.4.16 READ-ID (RDID)
The Read-ID instruction (RDID) identifies the devices
as SST25PF040B and manufacturer as Microchip. This
command is backward compatible to all SST25xFxxxA
devices and should be used as default device identifi-
cation when multiple versions of SPI Serial Flash
devices are used in a design. The device information
can be read from executing an 8-bit command, 90H or
ABH, followed by address bits [A
23
-A
0
]. Following the
Read-ID instruction, the manufacturer’s ID is located in
address 00000H and the device ID is located in
address 00001H. Once the device is in Read-ID mode,
the manufacturer’s and device ID output data toggles
between address 00000H and 00001H until terminated
by a low to high transition on CE#.
Refer to Tables 4-5 and 4-6 for device identification
data.
TABLE 4-5: JEDEC READ-ID DATA
Manufacturer’s ID Device ID
Memory Type Memory Capacity
Byte1 Byte 2 Byte 3
BFH 25H 8DH
25 8D
25134 JEDECID.1
CE#
SO
SI
SCK
012345678
HIGH IMPEDANCE
15 1614 28 29 30 31
BF
MODE 3
MODE 0
MSBMSB
9 10111213 1718 32 34
9F
19 20 21 22 23 3324 25 26 27
TABLE 4-6: PRODUCT IDENTIFICATION
Address Data
Manufacturer’s ID 00000H BFH
Device ID 00001H 8DH
2014 Microchip Technology Inc. DS20005134B-page 17
SST25PF040B
FIGURE 4-19: READ-ID SEQUENCE
25134 RdID.0
CE#
SO
SI
SCK
00
012345678
00 ADD
1
90 or AB
HIGH IMPEDANCE
15 16
23
24
31
32
39
40
47 48 55 56 63
BF
Device ID
BF
Device ID
Note: The manufacturer's and device ID output stream is continuous until terminated by a low to high transition on CE#.
Device ID = 8DH for SST25PF040B
1. 00H will output the manfacturer's ID first and 01H will output device ID first before toggling between the two.
HIGH
IMPEDANCE
MODE 3
MODE 0
MSB MSB
MSB
SST25PF040B
DS20005134B-page 18 2014 Microchip Technology Inc.
5.0 ELECTRICAL SPECIFICATIONS
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maxi-
mum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and func-
tional operation of the device at these conditions or conditions greater than those defined in the operational
sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may
affect device reliability.)
Temperature Under Bias ..................................................-55°C to +125°C
Storage Temperature ....................................................-65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential ................................ -0.5V to V
DD
+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential ..................... -2.0V to V
DD
+2.0V
Package Power Dissipation Capability (T
A
= 25°C) ......................................1.0W
Surface Mount Solder Reflow Temperature ...............................260°C for 10 seconds
Output Short Circuit Current
1
......................................................50mA
1. Output shorted for no more than one second. No more than one output shorted at a time.
TABLE 5-1: OPERATING RANGE
Range Ambient Temp V
DD
Commercial 0°C to +70°C 2.3-3.6V
TABLE 5-2: AC CONDITIONS OF TEST
1
1. See Figures 5-5 and 5-6
Input Rise/Fall Time Output Load
5ns C
L
=30pF
TABLE 5-3: DC OPERATING CHARACTERISTICS
Symbol Parameter
Limits
Test ConditionsMin Max Units
I
DDR
Read Current 12 mA CE#=0.1 V
DD
/0.9 V
DD
@33 MHz, SO=open
I
DDR3
Read Current 20 mA CE#=0.1 V
DD
/0.9 V
DD
@80 MHz, SO=open
I
DDW
Program and Erase Current 30 mA CE#=V
DD
I
SB
Standby Current 20 µA CE#=V
DD
, V
IN
=V
DD
or V
SS
I
LI
Input Leakage Current AV
IN
=GND to V
DD
, V
DD
=V
DD
Max
I
LO
Output Leakage Current AV
OUT
=GND to V
DD
, V
DD
=V
DD
Max
V
IL
Input Low Voltage 0.7 V V
DD
=V
DD
Min
V
IH
Input High Voltage 0.7 V
DD
V V
DD
=V
DD
Max
V
OL
Output Low Voltage 0.2 V I
OL
=100 μA, V
DD
=V
DD
Min
V
OL2
Output Low Voltage 0.4 V I
OL
=1.6 mA, V
DD
=V
DD
Min
V
OH
Output High Voltage V
DD
-0.2 V I
OH
=-100 μA, V
DD
=V
DD
Min
TABLE 5-4: CAPACITANCE (T
A
= 25°C, F=1 MHZ, OTHER PINS OPEN)
Parameter Description Test Condition Maximum
C
OUT
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
Output Pin Capacitance V
OUT
=0V 12pF
C
IN
1
Input Capacitance V
IN
=0V 6pF

SST25PF040B-80-4C-S2AE-T

Mfr. #:
Manufacturer:
Microchip Technology
Description:
NOR Flash
Lifecycle:
New from this manufacturer.
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