SST25PF040B
DS20005134B-page 22 2014 Microchip Technology Inc.
5.1 Power-Up Specifications
All functionalities and DC specifications are specified
for a V
DD
ramp rate of greater than 1V per 100 ms (0V
to 2.5V in less than 250 ms, or 0V - 3.0V in less than
300 ms). See Table 5-8 and Figure 5-4 for more infor-
mation.
FIGURE 5-4: POWER-UP TIMING DIAGRAM
TABLE 5-8: RECOMMENDED SYSTEM POWER-UP TIMINGS
Symbol Parameter Minimum Units
T
PU-READ
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
V
DD
Min to Read Operation 100 µs
T
PU-WRITE
1
V
DD
Min to Write Operation 100 µs
Time
V
DD
Min
V
DD
Max
V
DD
Device fully accessible
T
PU-READ
T
PU-WRITE
Chip selection is not allowed.
Commands may not be accepted or properly
interpreted by the device.
25134 PwrUp.0
