IRLR120NTRPBF

P1-P3 P4-P6 P7-P9 P10-P11

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IRLR/U120NPbF

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

0

200

400

600

800

1 10 100

C, Capacitance (pF)

DS

V , Drain-to-Source Voltage (V)

A

V = 0V, f = 1MHz

C = C + C , C SHORTED

C = C

C = C + C

GS

iss gs gd ds

rss gd

oss ds gd

C

iss

C

oss

C

rss

0

3

6

9

12

15

0 5 10 15 20 25

Q , Total Gate Charge (nC)

G

V , Gate-to-Source Voltage (V)

GS

V = 80V

V = 50V

V = 20V

A

FOR TEST CIRCUIT

SEE FIGURE 13

I = 6.0A

D

DS

DS

DS

0.1

1

10

100

0.4 0.6 0.8 1.0 1.2 1.4

T = 25°C

J

V = 0V

GS

V , Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

SD

SD

A

T = 175°C

J

0.1

1

10

100

1 10 100 1000

V , Drain-to-Source Voltage (V)

DS

I , Drain Current (A)

OPERATION IN THIS AREA LIMITED

BY R

D

DS(on)

10μs

100μs

1ms

10ms

A

T = 25°C

T = 175°C

Single Pulse

C

J

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IRLR/U120NPbF

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%

V

GS

t

d(on)

t

r

t

d(off)

t

f

Fig 10b. Switching Time Waveforms

V

DS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

R

D

V

GS

R

G

D.U.T.

5.0V

+

-

V

DD

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

0

2

4

6

8

10

25 50 75 100 125 150 175

C

I , Drain Current (Amps)

D

T , Case Temperature (°C)

A

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

1 2

J DM thJC C

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

1

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

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IRLR/U120NPbF

Q

G

Q

GS

Q

GD

V

G

Charge

5.0 V

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

D.U.T.

V

DS

I

D

I

G

3mA

V

GS

.3μF

50KΩ

.2μF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

t

p

V

(BR)DSS

I

AS

R

G

I

AS

0.01

Ω

t

p

D.U.T

L

V

DS

+

-

V

DD

DRIVER

A

15V

10V

0

40

80

120

160

200

25 50 75 100 125 150 175

J

E , Single Pulse Avalanche Energy (mJ)

AS

A

Starting T , Junction Temperature (°C)

I

TOP 2.4A

4.2A

BOTTOM 6.0A

D

P1-P3 P4-P6 P7-P9 P10-P11

IRLR120NTRPBF

Mfr. #:

Buy IRLR120NTRPBF

Manufacturer:

Infineon Technologies

Description:

MOSFET 100V 1 N-CH HEXFET 185mOhms 13.3nC

Lifecycle:

New from this manufacturer.

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