MRF5P21180HR6
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed for W--CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN--PCS/cellular radio and WLL applications.
• Typical 2--Carrier W--CDMA Performance: V
DD
= 28 Volts,
I
DQ
= 1600 mA, Pout = 38 Watts Avg., Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 14 dB
Drain Efficiency — 25.5%
IM3 @ 10 MHz Offset — --37.5 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — --41 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 180 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
DD
Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40
µ
″ Nominal.
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage V
DSS
--0.5, +65 Vdc
Gate--Source Voltage V
GS
--0.5, +15 Vdc
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
530
3.0
W
W/°C
Storage Temperature Range T
stg
--65 to +150 °C
Case Operating Temperature T
C
150 °C
Operating Junction Temperature T
J
200 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 180 W CW
Case Temperature 71°C, 38 W CW
R
θ
JC
0.31
0.33
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF5P21180HR6
Rev. 3, 10/2008
Freescale Semiconductor
Technical Data
MRF5P21180HR6
2110--2170 MHz, 38 W AVG., 28 V
2 x W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFET
CASE 375D--05, STYLE 1
NI--1230
Freescale Semiconductor, Inc., 2008. All rights reserved.
