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MRF5P21180HR5

P1-P3P4-P6P7-P9P10-P10
MRF5P21180HR6
7
RF Device Data
Freescale Semiconductor
Z
o
= 25 Ω
Z
load
f = 2170 MHz
f = 2110 MHz
Z
source
f = 2170 MHz
f = 2110 MHz
Figure 12. Series Equivalent Source and Load Impedance
f
MHz
Z
source
Ω
Z
load
Ω
2110
2140
2170
5.39 -- j13.89
5.53 -- j14.51
5.66 -- j13.99
3.69 -- j10.51
3.81 -- j10.66
3.79 -- j11.05
Z
source
= Test circuit impedance as measured from
gate to gate, balanced configuration.
Z
load
= Test circuit impedance as measured
from drain to drain, balanced configuration.
V
DD
= 28 Vdc, I
DQ
= 1600 mA, P
out
= 38 W Avg.
Z
source
Z
load
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
--
-- +
+
8
RF Device Data
Freescale Semiconductor
MRF5P21180HR6
PACKAGE DIMENSIONS
CASE 375D--05
ISSUE E
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M--1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION OF
1.52 (38.61) BASED ON M3 SCREW.
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. GATE
5. SOURCE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 1.615 1.625 41.02 41.28
B 0.395 0.405 10.03 10.29
C 0.150 0.200 3.81 5.08
D 0.455 0.465 11.56 11.81
E 0.062 0.066 1.57 1.68
F 0.004 0.007 0.10 0.18
G 1.400 BSC 35.56 BSC
H 0.082 0.090 2.08 2.29
K 0.117 0.137 2.97 3.48
L 0.540 BSC 13.72 BSC
N 1.218 1.242 30.94 31.55
Q 0.120 0.130 3.05 3.30
R 0.355 0.365 9.01 9.27
A
G
L
D
K
4X
Q
2X
1 2
43
M 1.219 1.241 30.96 31.52
S 0.365 0.375 9.27 9.53
aaa 0.013 REF 0.33 REF
bbb 0.010 REF 0.25 REF
ccc 0.020 REF 0.51 REF
SEATING
PLANE
N
C
E
M
M
A
M
aaa B
M
T
B
B
(FLANGE)
H
F
M
A
M
ccc B
M
T
R
(LID)
S
(INSULATOR)
M
A
M
bbb B
M
T
4X
A
T
M
A
M
bbb B
M
T
(INSULATOR)
M
A
M
ccc B
M
T
(LID)
PIN 5
M
A
M
bbb B
M
T
4
NI--1230
MRF5P21180HR6
9
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
3 Oct. 2008 • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN12779, p. 1, 2
• Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part
numbers, p. 3
• Added Product Documentation and Revision History, p. 9
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MRF5P21180HR5

Mfr. #:
Buy MRF5P21180HR5
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors HV5 38W WCDMA NI1230H
Lifecycle:
New from this manufacturer.
Delivery:
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