6
RF Device Data
Freescale Semiconductor
MRF5P21180HR6
TYPICAL CHARACTERISTICS
0
40
4
--55
--15
G
ps
ACPR
IM3
P
out
, OUTPUT POWER (WATTS) W--CDMA
Figure 8. 2--Carrier W--CDMA ACPR, IM3, Power
Gain and Drain Efficiency versus Output Power
IM3 (dBc), ACPR (dBc)
V
DD
= 28 Vdc, I
DQ
= 1600 mA
f1 = 2135 MHz, f2 = 2145 MHz
2 x W--CDMA, 10 MHz @ 3.84 MHz Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
35 --20
30 --25
25 --30
20 --35
15 --40
10 --45
5 --50
6 8 10 30 50
T
J
, JUNCTION TEMPERATURE (°C)
Figure 9. MTTF Factor versus Junction Temperature
This above graph displays calculated MTTF in hours x ampere
2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
D
2
for MTTF in a particular application.
220100 120 140 160 180 200
10
7
10
10
10
9
10
8
MTTF FACTOR (HOURS x AMPS )
2
η
D
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
10
0.0001
100
0
PEAK--TO--AVERAGE (dB)
Figure 10. CCDF W--CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single Carrier Test Signal
PROBABILITY (%)
10
1
0.1
0.01
0.001
2 4 6 8
W--CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
Figure 11. 2-Carrier W-CDMA Spectrum
f, FREQUENCY (MHz)
--110
--120
--70
--20
--80
--60
--50
(dB)
--90
--100
--40
--30
3.84 MHz
Channel BW
--IM3 in
3.84 MHz BW
+IM3 in
3.84 MHz BW
--ACPR in
3.84 MHz BW
+ACPR in
3.84 MHz BW
20
5 15
10
0--5
--10
--15
--20
--25
25
W--CDMA TEST SIGNAL
