HMC939ATCPZ-EP-R7

0.1 GHz to 33 GHz,1 dB LSB, 5-Bit,
GaAs Digital Attenuator
Data Sheet
HMC939ATCPZ-EP
Rev. 0 Document Feedback
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FEATURES
Attenuation range: 1 dB LSB steps to 31 dB
Insertion loss: 6 dB typical at 33 GHz
Attenuation accuracy: ±0.5 dB
Input linearity
0.1 dB compression (P0.1dB): 24 dBm typical
3rd-order intercept (IP3): 40 dBm typical
Power handling: 27 dBm maximum
Dual-supply operation: ±5 V
CMOS-/TTL-compatible parallel control
24-lead, 4 mm × 4 mm LFCSP package
ENHANCED PRODUCT FEATURES
Supports defense and aerospace applications (AQEC standard)
Military temperature range: 55°C to +125°C
Controlled manufacturing baseline
One assembly/test site
One fabrication site
Enhanced product change notification
Qualification data available on request
APPLICATIONS
Test instrumentation
Microwave radios and very small aperture terminals (VSATs)
Military radios, radars, electronic counter measures (ECMs)
Broadband telecommunications systems
FUNCTIONAL BLOCK DIAGRAM
PACKAGE
BASE
CIN
4P
3P
2P
1P
0P
CIN
CIN
CIN
CIN
CIN
CIN
NIC
RF2
NIC
NIC
NIC
VDD
NIC
NIC = NO INTERNAL CONNECTION
RF1
NIC
NIC
NIC
VSS
24 23 22 21 20
7
1
2
3
4
5
6
18
17
16
15
14
13
8 9 10 11 12
DRIVER
2dB 4dB 8dB 16dB
19
GND
16267-001
Figure 1.
GENERAL DESCRIPTION
The HMC939ATCPZ-EP is a 5-bit digital attenuator with a 31 dB
attenuation control range in 1 dB steps.
The HMC939ATCPZ-EP offers optimum insertion loss,
attenuation accuracy, and input linearity over the specified
frequency range from 100 MHz to 33 GHz.
The HMC939ATCPZ-EP requires dual-supply voltages,
V
DD
= 5 V and V
SS
= −5 V, a n d provides a complementary metal
oxide semiconductor (CMOS)-/transistor to transistor level
(TTL)-compatible parallel control interface by incorporating an
on-chip driver.
The HMC939ATCPZ-EP comes in a RoHS compliant, compact,
4 mm × 4 mm LFCSP package.
Additional application and technical information can be found
in the HMC939ALP4E data sheet.
HMC939ATCPZ-EP Data Sheet
Rev. 0 | Page 2 of 8
TABLE OF CONTENTS
Features .............................................................................................. 1
Enhanced Product Features ............................................................ 1
Applications ....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Absolute Maximum Ratings ............................................................ 4
Thermal Resistance ...................................................................... 4
Power Derating Curve ..................................................................4
ESD Caution...................................................................................4
Pin Configuration and Function Descriptions ..............................5
Interface Schematics .....................................................................6
Typical Performance Characteristics ..............................................7
Outline Dimension ............................................................................8
Ordering Guide .............................................................................8
REVISION HISTORY
10/2017—Revision 0: Initial Version
Data Sheet HMC939ATCPZ-EP
Rev. 0 | Page 3 of 8
SPECIFICATIONS
V
DD
= 5 V, V
SS
= 5 V, V
Px
= 0 V or V
DD
, T
CASE
= 25°C, 50 Ω system, unless otherwise noted.
Table 1.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
FREQUENCY RANGE 0.1 33 GHz
INSERTION LOSS 0.1 GHz to 18 GHz 4.5 5.5 dB
18 GHz to 26.5 GHz 5.5 7.0 dB
26.5 GHz to 33 GHz 6 8 dB
ATTENUATION
Range Between minimum and maximum
attenuation states, 0.1 GHz to 33 GHz
31 dB
Step Size Between any successive attenuation
states, 0.1 GHz to 33 GHz
1 dB
Step Error Between any successive attenuation
states, 0.1 GHz to 33 GHz
0.5 dB
State Error Referenced to insertion loss state
1 dB to 15 dB attenuation states,
0.1 GHz to 33 GHz
−(0.5 + 5% of
attenuation state)
+(0.5 + 5% of
attenuation state)
dB
16 dB to 31 dB attenuation states,
0.1 GHz to 20 GHz
−(0.5 + 5% of
attenuation state)
+(0.5 + 5% of
attenuation state)
dB
16 dB to 31 dB attenuation states,
20 GHz to 33 GHz
−(0.6 + 8% of
attenuation state)
+(0.6 + 8% of
attenuation state)
dB
RETURN LOSS RF1 and RF2 pins, all attenuation
states, 0.1 GHz to 33 GHz
10 dB
RELATIVE PHASE Between minimum and maximum
attenuation states
0.1 GHz to 18 GHz 45 Degrees
18 GHz to 26.5 GHz 60 Degrees
26.5 GHz to 33 GHz 80 Degrees
SWITCHING CHARACTERISTICS Between all attenuation states
Rise and Fall Time t
RISE
, t
FALL
10% to 90% of radio frequency (RF)
output
45 ns
On and Off Time
t
ON
, t
OFF
(V
CTL
) to 90% of RF output
60
ns
INPUT LINEARITY All attenuation states
0.1 dB Compression P0.1dB 0.1 GHz to 0.5 GHz 20 dBm
0.5 GHz to 33 GHz 24 dBm
Third-Order Intercept IP3 8 dBm per tone, 1 MHz spacing
0.1 GHz to 0.5 GHz 43 dBm
0.5 GHz to 33 GHz 40 dBm
SUPPLY CURRENT
Positive I
DD
2.5 4.5 6.5 mA
Negative I
SS
7.0 5.5 3.0 mA
DIGITAL CONTROL INPUTS P0 to P4 pins
Voltage
Low V
INL
0 0.8 V
High V
INH
2 5 V
Current
Low and High I
INL
, I
INH
<1 µA

HMC939ATCPZ-EP-R7

Mfr. #:
Manufacturer:
Analog Devices / Hittite
Description:
Attenuators EP attenuator
Lifecycle:
New from this manufacturer.
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