SI3552DV-T1-GE3 Datasheet SI3552DV-T1-GE3, SI3552DV-T1-E3 | P1-P3

Vishay Siliconix

Si3552DV

Document Number: 70971

S09-2110-Rev. C, 12-Oct-09

www.vishay.com

1

N- and P-Channel 30-V (D-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

®

Power MOSFET

•100 % R

g

Tested

• Compliant to RoHS Directive 2002/95/EC

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(Ω)I

D

(A)

N-Channel 30

0.105 at V

GS

= 10 V

2.5

0.175 at V

GS

= 4.5 V

2.0

P-Channel - 30

0.200 at V

GS

= - 10 V

- 1.8

0.360 at V

GS

= - 4.5 V

- 1.2

TSOP-6

Top View

6

4

1

2

3

5

2.85 mm

3 mm

D2G2

S1S2

D1G1

Ordering Information: Si3552DV -T1-E3 (Lead (Pb)-free)

Si3552DV-T1-GE3 (Lead (Pb)-free and Halogen-free)

D

1

G

1

S

1

N-Channel MOSFET

S

2

G

2

D

2

P-Channel MOSFET

Notes:

a. Surface Mounted on FR4 board.

b. t ≤ 5 s.

ABSOLUTE MAXIMUM RATINGS T

A

= 25 °C, unless otherwise noted

Parameter Symbol N-Channel P-Channel Unit

Drain-Source Voltage

V

DS

30 - 30

V

Gate-Source Voltage

V

GS

± 20 ± 20

Continuous Drain Current (T

J

= 150 °C)

a, b

T

A

= 25 °C

I

D

2.5 - 1.8

A

T

A

= 70 °C

2.0 - 1.2

Pulsed Drain Current

I

DM

8- 7

Continuous Source Current (Diode Conduction)

a, b

I

S

1.05 - 1.05

Maximum Power Dissipation

a, b

T

A

= 25 °C

P

D

1.15

W

T

A

= 70 °C

0.73

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

t ≤ 5 s

R

thJA

93 110

°C/W

Steady State 130 150

Maximum Junction-to-Lead Steady State

R

thJL

75 90

www.vishay.com

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Document Number: 70971

S09-2110-Rev. C, 12-Oct-09

Vishay Siliconix

Si3552DV

Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Gate Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= 250 µA

N-Ch 1.0

V

DS

= V

GS

, I

D

= - 250 µA

P-Ch - 1.0

Gate-Body Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 20 V

N-Ch ± 100

nA

P-Ch ± 100

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 24 V, V

GS

= 0 V

N-Ch 1

µA

V

DS

= - 24 V, V

GS

= 0 V

P-Ch - 1

V

DS

= 24 V, V

GS

= 0 V, T

J

= 55 °C

N-Ch 5

V

DS

= - 24 V, V

GS

= 0 V, T

J

= 55 °C

P-Ch - 5

On-State Drain Current

a

I

D(on)

V

DS

= 5 V, V

GS

= 10 V

N-Ch 5

A

V

DS

= - 5 V, V

GS

= - 10 V

P-Ch - 5

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= 10 V, I

D

= 2.5 A

N-Ch 0.085 0.105

Ω

V

GS

= - 10 V, I

D

= - 1.8 A

P-Ch 0.165 0.200

V

GS

= 4.5 V, I

D

= 2.0 A

N-Ch 0.140 0.175

V

GS

= - 4.5 V, I

D

= - 1.2 A

P-Ch 0.298 0.360

Forward Transconductance

a

g

fs

V

DS

= 10 V, I

D

= 2.5 A

N-Ch 4.3

S

V

DS

= - 15 V, I

D

= - 1.8 A

P-Ch 2.4

Diode Forward Voltage

a

V

SD

I

S

= 1.05 A, V

GS

= 0 V

N-Ch 0.81 1.10

V

I

S

= - 1.05 A, V

GS

= 0 V

P-Ch - 0.83 - 1.10

Dynamic

b

Total Gate Charge

Q

g

N-Channel

V

DS

= 15 V, V

GS

= 5 V, I

D

= 1.8 A

P-Channel

V

DS

= - 15 V, V

GS

= - 5 V, I

D

= - 1.8 A

N-Ch 2.1 3.2

nC

P-Ch 2.4 3.6

Gate-Source Charge

Q

gs

N-Ch 0.7

P-Ch 0.9

Gate-Drain Charge

Q

gd

N-Ch 0.7

P-Ch 0.8

Gate Resistance

R

g

N-Ch 0.5 2.4

Ω

P-Ch 3 11

Turn-O n D e l ay T i m e

t

d(on)

N-Channel

V

DD

= 15 V, R

L

= 15 Ω

I

D

≅ 1 A, V

GEN

= 10 V, R

g

= 6 Ω

P-Channel

V

DD

= - 15 V, R

L

= 15 Ω

I

D

≅ - 1 A, V

GEN

= - 10 V, R

g

= 6 Ω

N-Ch 7 11

ns

P-Ch 8 12

Rise Time

t

r

N-Ch 9 14

P-Ch 12 18

Turn-Off Delay Time

t

d(off)

N-Ch 13 20

P-Ch 12 18

Fall Time

t

f

N-Ch 5 8

P-Ch 7 11

Source-Drain Reverse Recovery Time

t

rr

I

F

= 1.05 A, dI/dt = 100 A/µs

N-Ch 35 60

I

F

= - 1.05 A, dI/dt = 100 A/µs

P-Ch 30 60

Document Number: 70971

S09-2110-Rev. C, 12-Oct-09

www.vishay.com

3

Vishay Siliconix

Si3552DV

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

2

4

6

8

10

012345

V

DS

- Drain-to-Source Voltage (V)

- Drain Current (A)I

D

V

GS

= 10 V thru 5 V

4 V

3 V

2 V

0.00

0.05

0.10

0.15

0.20

0.25

01234567

R

DS(on)

I

D

- Drain Current (A)

V

GS

= 10 V

V

GS

= 4.5 V

- On-Resistance (Ω)

0

2

4

6

8

10

01234

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

GS

V

DS

= 15 V

I

D

= 1.8 A

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

2

4

6

8

10

0123456

V

GS

- Gate-to-Source Voltage (V)

- Drain Current (A)I

D

25 °C

T

C

= - 55 °C

125 °C

0

50

100

150

200

250

300

0 5 10 15 20 25 30

V

DS

- Drain-to-Source Voltage (V)

C - Capacitance (pF)

C

rss

C

oss

C

iss

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

- 50 - 25 0 25 50 75 100 125 150

T

J

- Junction Temperature (°C)

(Normalized)

- On-Resistance R

DS(on)

V

GS

= 10 V

I

D

= 2.5 A

SI3552DV-T1-GE3

SI3552DV-T1-GE3

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