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Document Number: 70971
S09-2110-Rev. C, 12-Oct-09
Vishay Siliconix
Si3552DV
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Gate Charge
Source-Drain Diode Forward Voltage
Threshold Voltage
0
2
4
6
8
10
012345
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
V
DS
= 15 V
I
D
= 1.8 A
1.2 1.5
0.1
1
10
0.00 0.3 0.6 0.9
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
- 0.4
- 0.2
0.0
0.2
0.4
0.6
- 50 - 25 0 25 50 75 100 125 150
T
J
- Temperature (°C)
I
D
= 250 µA
Variance (V)V
GS(th)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50 - 25 0 5 50 75 100 125 150
V
GS
= 10 V
I
D
= 1.8 A
T
J
- Junction Temperature (°C)
(Normalized)
- On-Resistance R
DS(on)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0246810
V
GS
- Gate-to-Source Voltage (V)
- On-Resistance (Ω)R
DS(on)
I
D
= 1.8 A
I
D
= 1 A
0.01
0
1
6
8
2
4
10 300.1
Power (W)
Time (s)
