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TCND5000

P1-P3P4-P6P7-P9P10-P12P13-P14
TCND5000
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 12-Jun-14
1
Document Number: 83795
For technical questions, contact: sensorstechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Reflective Optical Sensor with PIN Photodiode Output
DESCRIPTION
The TCND5000 is a reflective sensor that includes an
infrared emitter and pin photodiode in a surface mount
package which blocks visible light.
FEATURES
• Package type: surface mount
• Detector type: pin photodiode
• Dimensions (L x W x H in mm): 6 x 4.3 x 3.75
• Peak operating distance: 6 mm
• Operating range within > 20 % relative collector
current: 2 mm to 25 mm
• Typical output current under test: I
ra
> 0.11 μA
• Daylight blocking filter
• High linearity
• Emitter wavelength: 940 nm
• Lead (Pb)-free soldering released
• Moisture sensitivity level (MSL): 4
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Proximity sensor
•Object sensor
• Motion sensor
•Touch key
Notes
(1)
CTR: current transfer ratio, I
out
/I
in
(2)
Conditions like in table basic characteristics/sensors
Note
• MOQ: minimum order quantity
Detector
Emitter
C
A
C
A
21846
Marking area
Top view
19967
PRODUCT SUMMARY
PART NUMBER
DISTANCE FOR
MAXIMUM CTR
rel
(1)
(mm)
DISTANCE RANGE FOR
RELATIVE I
out
> 20 %
(mm)
TYPICAL OUTPUT
CURRENT UNDER TEST
(2)
(mA)
DAYLIGHT
BLOCKING FILTER
INTEGRATED
TCND5000 6 2 to 25 0.0015 Yes
ORDERING INFORMATION
ORDERING CODE PACKAGING VOLUME REMARKS
TCND5000 Tape and reel MOQ: 2000 pcs, 2000 pcs/reel Drypack
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT (EMITTER)
Reverse voltage V
R
5V
Forward current I
F
100 mA
Peak forward current t
p
= 50 μs, t = 2 ms, T
amb
25 °C I
FM
500 mA
Power dissipation P
V
190 mW
Junction temperature T
j
100 °C
TCND5000
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 12-Jun-14
2
Document Number: 83795
For technical questions, contact: sensorstechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Forward Current Limit vs. Ambient Temperature
OUTPUT (DETECTOR)
Reverse voltage V
R
60 V
Power dissipation P
V
75 mW
Junction temperature T
j
100 °C
SENSOR
Ambient temperature range T
amb
-40 to +85 °C
Storage temperature range T
stg
-40 to +100 °C
Soldering temperature acc. fig. 14 T
sd
260 °C
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
0
20
40
60
80
100
120
16188
I
F
- Forward Current (mA)
0
T
amb
- Ambient Temperature (°C)
90
80
70
60
50
40
30
20
10
100
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT (EMITTER)
(1)
Forward voltage I
F
= 50 mA, t
p
= 20 ms V
F
1.2 1.5 V
Temperature coefficient of V
F
I
F
= 1 mA TK
VF
-1.3 mV/K
Reverse current V
R
= 5 V I
R
10 μA
Junction capacitance V
R
= 0 V, f = 1 MHz, E = 0 lx C
j
40 pF
Radiant intensity I
F
= 20 mA, t
p
= 20 ms I
e
11 15 mW/sr
Angle of half intensity ± 12 deg
Peak wavelength I
F
= 100 mA
P
930 940 nm
Spectral bandwidth I
F
= 100 mA  30 nm
Temperature coefficient of
p
I
F
= 100 mA TK
P
0.2 nm/K
Rise time I
F
= 100 mA t
r
15 ns
Fall time I
F
= 100 mA t
f
15 ns
TCND5000
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 12-Jun-14
3
Document Number: 83795
For technical questions, contact: sensorstechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
See figures 2 to 8 accordingly
(2)
See figures 9 to 12 accordingly
Fig. 2 - Test Circuit
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 3 - Forward Current vs. Forward Voltage Fig. 4 - Radiant Intensity vs. Forward Current
OUTPUT (DETECTOR)
(2)
Forward voltage I
F
= 50 mA V
F
11.3V
Breakdown voltage I
R
= 100 μA V
BR
60 V
Reverse dark current V
R
= 10 V, E = 0 lx I
ro
110nA
Diode capacitance V
R
= 5 V, f = 1 MHz, E = 0 lx C
D
1.8 pF
Reverse light current E
e
= 1 mW/cm
2
, = 950 nm, V
R
= 5 V I
ra
12 μA
Temperature coefficient of I
ra
= 870 nm, V
R
= 5 V TK
ira
0.2 %/K
Angle of half intensity ± 15 deg
Wavelength of peak sensitivity
P
930 nm
Range of spectral bandwidth
0.5
840 to 1050 nm
SENSOR
Reverse Light Current
V
R
= 2.5 V, I
F
= 20 mA, D = 30 mm,
reflective mode: see figure 2
I
ra
110 260 nA
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Kodak grey card
2 0 % Reflectivity
30 mm
D = 30 mm
18223
d = 26.25 mm
1
10
100
1000
01 23
t
p
= 100 µs
t
p
/T= 0.001
V
F
- Forward Voltage (V)
21534
I
F
- Forward Current (mA)
0.1
1
10
100
1000
1 10 100 1000
I
e
- Radiant Intensity (mW/sr)
I
F
- Forward Current (mA)
t
p
= 100 μs
P1-P3P4-P6P7-P9P10-P12P13-P14

TCND5000

Mfr. #:
Buy TCND5000
Manufacturer:
Vishay Semiconductors
Description:
Optical Switches, Specialized Reflective Sensor w/PIN Photodiode Out
Lifecycle:
New from this manufacturer.
Delivery:
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