TCND5000
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Vishay Semiconductors
Rev. 1.6, 12-Jun-14
4
Document Number: 83795
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Fig. 5 - Relative Radiant Power vs. Wavelength
Fig. 6 - Relative Radiant Intensity vs. Angular Displacement
Fig. 7 - Reverse Dark Current vs. Ambient Temperature
Fig. 8 - Relative Reverse Light Current vs. Ambient Temperature
Fig. 9 - Reverse Light Current vs. Irradiance
Fig. 10 - Diode Capacitance vs. Reverse Voltage
0
10
20
30
40
50
60
70
80
90
100
840 880 920 960 1000 1040
λ - Wavelength (nm)
21445
Φ
e rel
- Relative Radiant Power (%)
I
F
= 30 mA
I
e rel
- Relative Intensity
18234
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
0.6
0.4
0.2
0
0.2
0.4
20
1
10
100
1000
I
ro
- Reverse Dark Current (nA)
T
amb
- Ambient Temperature (°C)
94 8427
V
R
= 10 V
100
806040
0.6
0.8
1.0
1.2
1.4
I
ra, rel
- Relative Reverse Light Current
T
amb
- Ambient Temperature (°C)
94 8416
V
R
= 5 V
λ = 950 nm
0
10080
60
4020
0.1
1.0
10
100
0.01
I
ra
- Reverse Light Current (µA)
E
e
- Irradiance (mW/cm²)
16055
V
CE
= 5 V
λ = 950 nm
10
1
0.1
0
2
4
6
8
0.1
C
D
- Diode Capacitance (pF)
V
R
- Reverse Voltage (V)
94 8430
E = 0
f = 1 MHz
100
10
1
