SIHP12N50C-E3 Datasheet SIHF12N50C-E3, SIHP12N50C-E3, SIHB12N50C-E3 | P1-P3

Document Number: 91388 www.vishay.com

S10-0969-Rev. B, 26-Apr-10 1

Power MOSFET

SiHP12N50C, SiHB12N50C, SiHF12N50C

Vishay Siliconix

FEATURES

• Low Figure-of-Merit R

on

x Q

g

• 100 % Avalanche Tested

• Gate Charge Improved

•T

rr

/Q

rr

Improved

• Compliant to RoHS Directive 2002/95/EC

Notes

a. Limited by maximum junction temperature.

b. V

DD

= 50 V, starting T

J

= 25 °C, L = 2.5 mH, R

g

= 25 Ω, I

AS

= 12 A.

c. Repetitive rating; pulse width limited by maximum junction temperature.

d. 1.6 mm from case.

PRODUCT SUMMARY

V

DS

(V) at T

J

max. 560 V

R

DS(on)

(Ω)V

GS

= 10 V 0.555

Q

g

(Max.) (nC) 48

Q

gs

(nC) 12

Q

gd

(nC) 15

Configuration Single

N-Channel MOSFET

G

D

S

TO-220AB

G

D

S

D

G

TO-220 FULLPAK

D

2

PAK (TO-263)

G

D

S

ORDERING INFORMATION

Package TO-220AB D

2

PAK (TO-263) TO-220 FULLPAK

Lead (Pb)-free SiHP12N50C-E3 SiHB12N50C-E3 SiHF12N50C-E3

ABSOLUTE MAXIMUM RATINGS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL

LIMIT

UNIT

TO220-AB

D

2

PAK (TO-263)

TO-220

FULLPAK

Drain-Source Voltage V

DS

500

V

Gate-Source Voltage V

GS

± 30

Continuous Drain Current (T

J

= 150 °C)

a

V

GS

at 10 V

T

C

= 25 °C

I

D

12

AT

C

= 100 °C 7.5

Pulsed Drain Current

c

I

DM

28

Linear Derating Factor 1.67 0.28 W/°C

Single Pulse Avalanche Energy

b

E

AS

180 mJ

Maximum Power Dissipation P

D

208 36 W

Operating Junction and Storage Temperature Range T

J

, T

stg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

d

for 10 s 300

* Pb containing terminations are not RoHS compliant, exemptions may apply

www.vishay.com Document Number: 91388

2 S10-0969-Rev. B, 26-Apr-10

SiHP12N50C, SiHB12N50C, SiHF12N50C

Vishay Siliconix

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

Note

• The information shown here is a preliminary product proposal, not a commercial product data sheet. Vishay Siliconix is not committed to

produce this or any similar product. This information should not be used for design purposes, nor construed as an offer to furnish or sell

such products.

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TO220-AB D

2

PAK (TO-263) TO-220 FULLPAK UNIT

Maximum Junction-to-Ambient R

thJA

62 65

°C/WMaximum Junction-to-Case (Drain) R

thJC

0.6 3.5

Junction-to-Ambient (PCB mount)

a

R

thJA

40 -

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

DS

V

GS

= 0 V, I

D

= 250 μA 500 - - V

V

DS

Temperature Coefficient ΔV

DS

/T

J

Reference to 25 °C, I

D

= 1 mA - 0.6 - V/°C

Gate-Source Threshold Voltage (N) V

GS(th)

V

DS

= V

GS

, I

D

= 250 μA 3.0 - 5.0 V

Gate-Source Leakage I

GSS

V

GS

= ± 30 V - - ± 100 nA

Zero Gate Voltage Drain Current I

DSS

V

DS

= 500 V, V

GS

= 0 V - - 50

μA

V

DS

= 400 V, V

GS

= 0 V, T

J

= 125 °C - - 250

Drain-Source On-State Resistance R

DS(on)

V

GS

= 10 V I

D

= 4 A - 0.46 0.555 Ω

Forward Transconductance g

fs

V

DS

= 50 V, I

D

= 3 A - 3 - S

Dynamic

Input Capacitance C

iss

V

GS

= 0 V,

V

DS

= 25 V,

f = 1.0 MHz

- 1375 -

pFOutput Capacitance C

oss

- 165 -

Reverse Transfer Capacitance C

rss

-17-

Total Gate Charge Q

g

V

GS

= 10 V I

D

= 10 A, V

DS

= 400 V

-3248

nC Gate-Source Charge Q

gs

-12-

Gate-Drain Charge Q

gd

-15-

Turn-On Delay Time t

d(on)

V

DD

= 250 V, I

D

= 10 A

R

g

= 4.3 Ω, V

GS

= 10 V

-18-

ns

Rise Time t

r

-35-

Turn-Off Delay Time t

d(off)

-23-

Fall Time t

f

-6-

Gate Input Resistance R

g

f = 1 MHz, open drain - 1.1 - Ω

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

S

MOSFET symbol

showing the

integral reverse

p - n junction diode

--12

A

Pulsed Diode Forward Current I

SM

--28

Body Diode Voltage V

SD

T

J

= 25 °C, I

S

= 10 A, V

GS

= 0 V - - 1.8 V

Body Diode Reverse Recovery Time t

rr

T

J

= 25 °C, I

F

= I

S

, dI/dt = 100 A/μs,

V

R

= 20 V

- 580 - ns

Body Diode Reverse Recovery Charge Q

rr

-4.3-μC

Body Diode Reverse Recovery Current I

RRM

-13- A

S

D

G

Document Number: 91388 www.vishay.com

S10-0969-Rev. B, 26-Apr-10 3

SiHP12N50C, SiHB12N50C, SiHF12N50C

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics (TO-220)

Fig. 2 - Typical Output Characteristics (TO-220)

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

V

DS

, Drain-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

0 5 10 15 20 25 30

0

5

10

15

20

25

30

V

GS

TOP 15 V

14 V

13 V

12 V

11 V

10 V

9.0 V

8.0 V

7.0 V

6.0 V

BOTTOM 5.0 V

7.0 V

T

J

= 25 °C

V

DS

, Drain-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

0 5 10 15 20 25 30

0

3

6

9

12

15

18

V

GS

TOP 15 V

14 V

13 V

12 V

11 V

10 V

9.0 V

8.0 V

7.0 V

6.0 V

BOTTOM 5.0 V

T

J

= 150 °C

7.0 V

V

GS

, Gate-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

0 5 10 15 20 25

0

5

10

15

20

25

35

T

J

= 150 °C

T

J

= 25 °C

30

T

J

, Junction Temperature (°C)

R

DS(on)

, Drain-to-Source On-Resistance

(Normalized)

0

0.5

1

1.5

2

2.5

3

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

V

GS

= 10 V

I

D

= 12 A

SIHP12N50C-E3

SIHP12N50C-E3

Products related to this Datasheet