www.vishay.com Document Number: 91388
4 S10-0969-Rev. B, 26-Apr-10
SiHP12N50C, SiHB12N50C, SiHF12N50C
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area (TO-220AB, D
2
PAK)
Fig. 9 - Maximum Safe Operating Area (TO-220 FULLPAK)
V
DS
, Drain-to-Source Voltage (V)
C, Capacitance (pF)
1 10 100 1000
2400
2000
1600
1200
800
400
0
C
oss
C
iss
V
GS
= 0 V, f = 1MHz
C
iss
= C
gs
+C
gd
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
rss
Q
G
, Total Gate Charge (nC)
V
GS
, Gate-to-Source Voltage (V)
0 102030405060
0
4
8
12
20
24
V
DS
= 400 V
V
DS
= 250 V
V
DS
= 100 V
16
I
D
= 12 A
0.1
1
10
100
V
SD
, Source-to-Drain Voltage (V)
I
SD
, Reverse Drain Current (A)
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
T
J
= 150 °C
T
J
= 25 °C
V
GS
= 0 V
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain-to-Source Current (A)
10 100 1000
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
100 µs
1 ms
10 ms
OPERATION IN THIS AREA
LIMITED BY R
DS(on)
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain-to-Source Current (A)
10 100 1000
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
100 µs
1 ms
10 ms
OPERATION IN THIS AREA
LIMITED BY R
DS(on)
