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SIHB12N50C-E3

SIHB12N50C-E3
Mfr. #:
SIHB12N50C-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET N-Channel 500V
Lifecycle:
New from this manufacturer.
Datasheet:
SIHB12N50C-E3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB12N50C-E3 DatasheetSIHB12N50C-E3 Datasheet (P4-P6)SIHB12N50C-E3 Datasheet (P7-P9)SIHB12N50C-E3 Datasheet (P10)
ECAD Model:
More Information:
SIHB12N50C-E3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
560 V
Id - Continuous Drain Current:
12 A
Rds On - Drain-Source Resistance:
555 mOhms
Vgs th - Gate-Source Threshold Voltage:
5 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
32 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
208 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Bulk
Brand:
Vishay / Siliconix
Fall Time:
6 ns
Product Type:
MOSFET
Rise Time:
35 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
23 ns
Typical Turn-On Delay Time:
18 ns
Unit Weight:
0.050717 oz
Tags
SIHB12N5, SIHB12N, SIHB12, SIHB1, SIHB, SIH
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SIHB12N50C-E3 N-channel MOSFET Transistor; 12 A; 500 V; 3-Pin D2PAK
***et
Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK
*** Europe
N-CH SINGLE 500V TO263
SiHx12N50C-E3 500V N-Channel Power MOSFETs
Vishay Siliconix SiHx12N50C-E3 500V, 12A N-Channel Power MOSFETs with ultra-low 0.555-Ω maximum on-resistance at a 10V gate drive and an improved gate charge of 48nC. The low on-resistance of the Vishay Siliconix SiHP12N50C-E3 (TO-220 package), SiHF12N50C-E3 (TO-220 FULLPAK), and SiHB12N50C-E3 (D²PAK) translates into lower conduction losses that save energy in power factor correction (PFC) boost circuits, pulse width modulation (PWM) half bridges, and LLC topologies in a wide range of applications, including notebook computer AC adapters, PCs, LCD TVs, and open-frame power supplies. SiHx12N50C-E3 500V Power MOSFETs feature a gate charge of 48nC. Gate charge times on-resistance is a low 26.54Ω-nC. These Vishay Siliconix Power MOSFETs are produced using Vishay Planar Cell technology, which has been tailored to minimize on-state resistance and withstand high energy pulses in the avalanche and commutation mode. The SiHP12N50C-E3, SiHG12N50C-E3, and SiHB12N50C-E3 offer improved switching speed and conduction losses compared to previous-generation MOSFETs.Learn More
Part # Mfg. Description Stock Price
SIHB12N50C-E3
DISTI # SIHB12N50C-E3-ND		Vishay SiliconixMOSFET N-CH 500V 12A D2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$2.9106
SIHB12N50C-E3
DISTI # SIHB12N50C-E3		Vishay IntertechnologiesTrans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK - Tape and Reel (Alt: SIHB12N50C-E3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$2.6900
  • 2000:$2.5900
  • 4000:$2.4900
  • 6000:$2.3900
  • 10000:$2.3900
SIHB12N50C-E3
DISTI # 70616559		Vishay SiliconixSIHB12N50C-E3 N-channel MOSFET Transistor,12 A,500 V,3-Pin D2PAK
RoHS: Compliant		0
  • 100:$3.2400
  • 250:$2.7400
  • 500:$2.5400
  • 1000:$2.3700
SIHB12N50C-E3
DISTI # 781-SIHB12N50C-E3		Vishay IntertechnologiesMOSFET N-Channel 500V
RoHS: Compliant		1000
  • 1:$5.3000
  • 10:$4.3900
  • 100:$3.6100
  • 250:$3.5000
  • 500:$3.1400
  • 1000:$2.6500
  • 2000:$2.5200
SIHB12N50C-E3Vishay IntertechnologiesMOSFET N-Channel 500V
RoHS: Compliant		Americas -
    Image Part # Description
    SIHB12N50E-GE3

    Mfr.#: SIHB12N50E-GE3

    OMO.#: OMO-SIHB12N50E-GE3

    		 MOSFET 500V Vds 30V Vgs D2PAK (TO-263)
    SIHB12N60E-GE3

    Mfr.#: SIHB12N60E-GE3

    OMO.#: OMO-SIHB12N60E-GE3

    		 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
    SIHB12N65E-GE3

    Mfr.#: SIHB12N65E-GE3

    OMO.#: OMO-SIHB12N65E-GE3-VISHAY

    		 IGBT Transistors MOSFET 650V 392mOhm@10V 12A N-Ch E-SRS
    SIHB12N50C-E3

    Mfr.#: SIHB12N50C-E3

    OMO.#: OMO-SIHB12N50C-E3-VISHAY

    		 IGBT Transistors MOSFET N-Channel 500V
    SIHB12N50E-GE3

    Mfr.#: SIHB12N50E-GE3

    OMO.#: OMO-SIHB12N50E-GE3-VISHAY

    		 IGBT Transistors MOSFET N-Channel 500V
    SIHB12N50C

    Mfr.#: SIHB12N50C

    OMO.#: OMO-SIHB12N50C-1190

    		 New and Original
    SIHB12N60E

    Mfr.#: SIHB12N60E

    OMO.#: OMO-SIHB12N60E-1190

    		 New and Original
    SIHB12N60EGE3

    Mfr.#: SIHB12N60EGE3

    OMO.#: OMO-SIHB12N60EGE3-1190

    		 Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    SIHB120N60E-GE3

    Mfr.#: SIHB120N60E-GE3

    OMO.#: OMO-SIHB120N60E-GE3-VISHAY

    		 MOSFET N-CHAN 650V D2PAK (TO-263
    SIHB12N60ET1-GE3

    Mfr.#: SIHB12N60ET1-GE3

    OMO.#: OMO-SIHB12N60ET1-GE3-VISHAY

    		 MOSFET N-CH 600V 12A TO263
    Availability
    Stock:
    Available
    On Order:
    3000
    Enter Quantity:
    Current price of SIHB12N50C-E3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1000
    $2.64
    $2 640.00
    2000
    $2.51
    $5 020.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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