SIHB12N50E-GE3

SIHB12N50E-GE3
Mfr. #:
SIHB12N50E-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 500V Vds 30V Vgs D2PAK (TO-263)
Lifecycle:
New from this manufacturer.
Datasheet:
SIHB12N50E-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB12N50E-GE3 DatasheetSIHB12N50E-GE3 Datasheet (P4-P6)SIHB12N50E-GE3 Datasheet (P7-P9)
ECAD Model:
More Information:
SIHB12N50E-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
550 V
Id - Continuous Drain Current:
10.5 A
Rds On - Drain-Source Resistance:
380 mOhms
Vgs th - Gate-Source Threshold Voltage:
4 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
25 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
114 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Bulk
Series:
E
Brand:
Vishay / Siliconix
Fall Time:
12 ns
Product Type:
MOSFET
Rise Time:
16 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
29 ns
Typical Turn-On Delay Time:
13 ns
Unit Weight:
0.050717 oz
Tags
SIHB12N5, SIHB12N, SIHB12, SIHB1, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 500V 10.5A 3-Pin(2+Tab) D2PAK
***ure Electronics
Single N-Channel 500 V 0.38 Ohm 50 nC 114 W Silicon Mosfet - TO-263-3
***ark
Transistor Polarity:N Channel
***et
N-CHANNEL 500V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Part # Mfg. Description Stock Price
SIHB12N50E-GE3
DISTI # SIHB12N50E-GE3-ND
Vishay SiliconixMOSFET N-CH 500V 10.5A TO-263
RoHS: Compliant
Min Qty: 1
Container: Bulk
12In Stock
  • 1000:$1.2282
  • 500:$1.4823
  • 100:$1.9058
  • 10:$2.3720
  • 1:$2.6300
SIHB12N50E-GE3
DISTI # SIHB12N50E-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 500V 10.5A 3-Pin D2PAK - Tape and Reel (Alt: SIHB12N50E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$1.1199
  • 2000:$1.0869
  • 4000:$1.0429
  • 6000:$1.0139
  • 10000:$0.9869
SIHB12N50E-GE3
DISTI # 43Y2393
Vishay IntertechnologiesMOSFET Transistor, N Channel, 10.5 A, 500 V, 0.33 ohm, 10 V, 4 V RoHS Compliant: Yes747
  • 1:$2.4000
  • 10:$1.9900
  • 25:$1.8400
  • 50:$1.6900
  • 100:$1.5400
  • 250:$1.4500
  • 500:$1.3500
SIHB12N50E-GE3
DISTI # 78-SIHB12N50E-GE3
Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant
997
  • 1:$2.4000
  • 10:$1.9900
  • 100:$1.5400
  • 500:$1.3500
  • 1000:$1.2900
SIHB12N50E-GE3
DISTI # 2471937
Vishay IntertechnologiesMOSFET, N CHANNEL, 500V, 10.5A, TO-263-3
RoHS: Compliant
747
  • 5:£1.6100
  • 25:£1.5000
  • 100:£1.1700
  • 250:£1.1000
  • 500:£1.0200
SIHB12N50E-GE3
DISTI # 2471937RL
Vishay IntertechnologiesMOSFET, N CHANNEL, 500V, 10.5A, TO-263-3
RoHS: Compliant
0
  • 1:$3.8100
  • 10:$3.1500
  • 100:$2.4400
  • 500:$2.1400
  • 1000:$2.0400
SIHB12N50E-GE3
DISTI # 2471937
Vishay IntertechnologiesMOSFET, N CHANNEL, 500V, 10.5A, TO-263-3
RoHS: Compliant
747
  • 1:$3.8100
  • 10:$3.1500
  • 100:$2.4400
  • 500:$2.1400
  • 1000:$2.0400
SIHB12N50E-GE3Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant
Americas -
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    AS0805KRX7R0BB103

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    OMO.#: OMO-AS0805KRX7R0BB103-YAGEO

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    CRCW12061K50FKEAC

    Mfr.#: CRCW12061K50FKEAC

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    CRCW06030000Z0EAC

    Mfr.#: CRCW06030000Z0EAC

    OMO.#: OMO-CRCW06030000Z0EAC-VISHAY-DALE

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    DZ2705100L

    Mfr.#: DZ2705100L

    OMO.#: OMO-DZ2705100L-PANASONIC

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    OMO.#: OMO-C0805C474K5RACAUTO7210-1190

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    CRCW120610R0FKEAC

    Mfr.#: CRCW120610R0FKEAC

    OMO.#: OMO-CRCW120610R0FKEAC-VISHAY-DALE

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    Availability
    Stock:
    978
    On Order:
    2961
    Enter Quantity:
    Current price of SIHB12N50E-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $2.39
    $2.39
    10
    $1.98
    $19.80
    100
    $1.54
    $154.00
    500
    $1.34
    $670.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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