SIHB12N50C-E3

SIHB12N50C-E3
Mfr. #:
SIHB12N50C-E3
Manufacturer:
Vishay
Description:
IGBT Transistors MOSFET N-Channel 500V
Lifecycle:
New from this manufacturer.
Datasheet:
SIHB12N50C-E3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
SIHB12N50C-E3 more Information
Product Attribute
Attribute Value
Tags
SIHB12N5, SIHB12N, SIHB12, SIHB1, SIHB, SIH
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SIHB12N50C-E3 N-channel MOSFET Transistor; 12 A; 500 V; 3-Pin D2PAK
***et
Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK
*** Europe
N-CH SINGLE 500V TO263
SiHx12N50C-E3 500V N-Channel Power MOSFETs
Vishay Siliconix SiHx12N50C-E3 500V, 12A N-Channel Power MOSFETs with ultra-low 0.555-Ω maximum on-resistance at a 10V gate drive and an improved gate charge of 48nC. The low on-resistance of the Vishay Siliconix SiHP12N50C-E3 (TO-220 package), SiHF12N50C-E3 (TO-220 FULLPAK), and SiHB12N50C-E3 (D²PAK) translates into lower conduction losses that save energy in power factor correction (PFC) boost circuits, pulse width modulation (PWM) half bridges, and LLC topologies in a wide range of applications, including notebook computer AC adapters, PCs, LCD TVs, and open-frame power supplies. SiHx12N50C-E3 500V Power MOSFETs feature a gate charge of 48nC. Gate charge times on-resistance is a low 26.54Ω-nC. These Vishay Siliconix Power MOSFETs are produced using Vishay Planar Cell technology, which has been tailored to minimize on-state resistance and withstand high energy pulses in the avalanche and commutation mode. The SiHP12N50C-E3, SiHG12N50C-E3, and SiHB12N50C-E3 offer improved switching speed and conduction losses compared to previous-generation MOSFETs.Learn More
Part # Mfg. Description Stock Price
SIHB12N50C-E3
DISTI # SIHB12N50C-E3-ND
Vishay SiliconixMOSFET N-CH 500V 12A D2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 1000:$2.9106
SIHB12N50C-E3
DISTI # SIHB12N50C-E3
Vishay IntertechnologiesTrans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK - Tape and Reel (Alt: SIHB12N50C-E3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$2.6900
  • 2000:$2.5900
  • 4000:$2.4900
  • 6000:$2.3900
  • 10000:$2.3900
SIHB12N50C-E3
DISTI # 70616559
Vishay SiliconixSIHB12N50C-E3 N-channel MOSFET Transistor,12 A,500 V,3-Pin D2PAK
RoHS: Compliant
0
  • 100:$3.2400
  • 250:$2.7400
  • 500:$2.5400
  • 1000:$2.3700
SIHB12N50C-E3
DISTI # 781-SIHB12N50C-E3
Vishay IntertechnologiesMOSFET N-Channel 500V
RoHS: Compliant
1000
  • 1:$5.3000
  • 10:$4.3900
  • 100:$3.6100
  • 250:$3.5000
  • 500:$3.1400
  • 1000:$2.6500
  • 2000:$2.5200
SIHB12N50C-E3Vishay IntertechnologiesMOSFET N-Channel 500V
RoHS: Compliant
Americas -
    Image Part # Description
    SIHB12N50E-GE3

    Mfr.#: SIHB12N50E-GE3

    OMO.#: OMO-SIHB12N50E-GE3

    MOSFET 500V Vds 30V Vgs D2PAK (TO-263)
    SIHB12N60ET1-GE3

    Mfr.#: SIHB12N60ET1-GE3

    OMO.#: OMO-SIHB12N60ET1-GE3

    MOSFET N-Channel 600V
    SIHB12N50C-E3

    Mfr.#: SIHB12N50C-E3

    OMO.#: OMO-SIHB12N50C-E3

    MOSFET N-Channel 500V
    SIHB12N60E-GE3

    Mfr.#: SIHB12N60E-GE3

    OMO.#: OMO-SIHB12N60E-GE3-VISHAY

    Darlington Transistors MOSFET 600V 380mOhm@10V 12A N-Ch E-SRS
    SIHB12N65E-GE3

    Mfr.#: SIHB12N65E-GE3

    OMO.#: OMO-SIHB12N65E-GE3-VISHAY

    IGBT Transistors MOSFET 650V 392mOhm@10V 12A N-Ch E-SRS
    SIHB12N50C-E3

    Mfr.#: SIHB12N50C-E3

    OMO.#: OMO-SIHB12N50C-E3-VISHAY

    IGBT Transistors MOSFET N-Channel 500V
    SIHB12N60E

    Mfr.#: SIHB12N60E

    OMO.#: OMO-SIHB12N60E-1190

    New and Original
    SIHB12N60EGE3

    Mfr.#: SIHB12N60EGE3

    OMO.#: OMO-SIHB12N60EGE3-1190

    Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    SIHB12N65E

    Mfr.#: SIHB12N65E

    OMO.#: OMO-SIHB12N65E-1190

    New and Original
    SIHB120N60E-GE3

    Mfr.#: SIHB120N60E-GE3

    OMO.#: OMO-SIHB120N60E-GE3-VISHAY

    MOSFET N-CHAN 650V D2PAK (TO-263
    Availability
    Stock:
    Available
    On Order:
    5000
    Enter Quantity:
    Current price of SIHB12N50C-E3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $2.88
    $2.88
    10
    $2.74
    $27.37
    100
    $2.59
    $259.26
    500
    $2.45
    $1 224.30
    1000
    $2.30
    $2 304.50
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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