OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BT136S-800F,118

P1-P3P4-P6P7-P9P10-P12P13-P14
IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW - For www.nxp.com use www.ween-semi.com
Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V. {year}. All rights reserved” becomes “
©
WeEn
Semiconductors Co., Ltd. {year}. All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BT136S-800F
4Q Triac
11 October 2016 Product data sheet
1. General description
Planar passivated four quadrant triac in a SOT428 (DPAK) surface-mountable plastic package
intended for use in general purpose bidirectional and phase control applications.
2. Features and benefits
• High blocking voltage capability
• Less sensitive gate for improved noise immunity
• Planar passivated for voltage ruggedness and reliability
• Surface-mountable package
• Triggering in all four quadrants
3. Applications
• General purpose motor controls
• General purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DRM
repetitive peak off-
state voltage
- - 800 V
I
T(RMS)
RMS on-state current full sine wave; T
mb
≤ 107 °C; Fig. 1;
Fig. 2; Fig. 3
- - 4 A
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; Fig. 4; Fig. 5
- - 25 AI
TSM
non-repetitive peak on-
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
- - 27 A
T
j
junction temperature - - 125 °C
Static characteristics
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 7
- 5 25 mA
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 7
- 8 25 mA
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 7
- 11 25 mA
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C; Fig. 7
- 30 70 mA
WeEn Semiconductors
BT136S-800F
4Q Triac
BT136S-800F All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 11 October 2016 2 / 13
Symbol Parameter Conditions Min Typ Max Unit
I
H
holding current V
D
= 12 V; T
j
= 25 °C; Fig. 9 - 5 15 mA
V
T
on-state voltage I
T
= 5 A; T
j
= 25 °C; Fig. 10 - 1.4 1.7 V
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 536 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
50 250 - V/µs
dV
com
/dt rate of change of
commutating voltage
V
D
= 400 V; T
j
= 95 °C; dI
com
/dt = 1.8 A/
ms; I
T
= 4 A; gate open circuit
- 50 - V/µs
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 T1 main terminal 1
2 T2 main terminal 2
3 G gate
mb T2 mounting base; main
terminal 2
3
2
mb
1
DPAK (SOT428)
sym051
T1
G
T2
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BT136S-800F DPAK plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
SOT428
P1-P3P4-P6P7-P9P10-P12P13-P14

BT136S-800F,118

Mfr. #:
Buy BT136S-800F,118
Manufacturer:
WeEn Semiconductors
Description:
Triacs TAPE13 TRIAC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet