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BT136S-800F,118

P1-P3P4-P6P7-P9P10-P12P13-P14
WeEn Semiconductors
BT136S-800F
4Q Triac
BT136S-800F All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 11 October 2016 6 / 13
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
half cycle; Fig. 6 - - 3.7 K/WR
th(j-mb)
thermal resistance
from junction to
mounting base
full cycle; Fig. 6 - - 3 K/W
R
th(j-a)
thermal resistance
from junction to
ambient free air
in free air; printed circuit board (FR4)
mounted; standard footprint, single-
sided copper, tin-plated
- 75 - K/W
003aae836
t
p
(s)
10
- 5
1 1010
- 1
10
- 2
10
- 4
10
- 3
1
10
- 1
10
Z
th(j-mb)
(K/W)
10
- 2
bidirectional
unidirectional
t
p
P
t
Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse width
WeEn Semiconductors
BT136S-800F
4Q Triac
BT136S-800F All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 11 October 2016 7 / 13
9. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 7
- 5 25 mA
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 7
- 8 25 mA
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 7
- 11 25 mA
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C; Fig. 7
- 30 70 mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 8
- 7 20 mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 8
- 16 30 mA
V
D
= 12 V; I
G
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 8
- 5 20 mA
I
L
latching current
V
D
= 12 V; I
G
= 0.1 A; T2- G+;
T
j
= 25 °C; Fig. 8
- 7 30 mA
I
H
holding current V
D
= 12 V; T
j
= 25 °C; Fig. 9 - 5 15 mA
V
T
on-state voltage I
T
= 5 A; T
j
= 25 °C; Fig. 10 - 1.4 1.7 V
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 11
- 0.7 1 VV
GT
gate trigger voltage
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 °C;
Fig. 11
0.25 0.4 - V
I
D
off-state current V
D
= 800 V; T
j
= 125 °C - 0.1 0.5 mA
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 536 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
50 250 - V/µs
dV
com
/dt rate of change of
commutating voltage
V
D
= 400 V; T
j
= 95 °C; dI
com
/dt = 1.8 A/
ms; I
T
= 4 A; gate open circuit
- 50 - V/µs
t
gt
gate-controlled turn-on
time
I
TM
= 6 A; V
D
= 800 V; I
G
= 0.1 mA; dI
G
/
dt = 5 A/µs
- 2 - µs
WeEn Semiconductors
BT136S-800F
4Q Triac
BT136S-800F All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 11 October 2016 8 / 13
T
j
(°C)
- 60 14090- 10 40
003aaf448
1
2
3
0
(1)
(2)
(3)
(4)
(1)
(2)
(3)
(4)
I
GT
I
GT
(25 °C)
(1) T2- G+
(2) T2- G-
(3) T2+ G-
(4) T2+ G+
Fig. 7. Normalized gate trigger current as a function of
junction temperature
T
j
(°C)
-60 14090-10 40
003aae835
1
2
3
0
I
L
I
L(25°C)
Fig. 8. Normalized latching current as a function of
junction temperature
T
j
(°C)
-60 14090-10 40
003aae837
1.0
0.5
1.5
2.0
0
I
H
I
H(25°C)
Fig. 9. Normalized holding current as a function of
junction temperature
V
T
(V)
0 321
003aae834
4
8
12
I
T
(A)
0
(1)
(2) (3)
V
o
= 1.27 V
R
s
= 0.091 Ω
(1) T
j
= 125 °C; typical values
(2) T
j
= 125 °C; maximum values
(3) T
j
= 25 °C; maximum values
Fig. 10. On-state current as a function of on-state
voltage
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BT136S-800F,118

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WeEn Semiconductors
Description:
Triacs TAPE13 TRIAC
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