WeEn Semiconductors
BT136S-800F
4Q Triac
BT136S-800F All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet 11 October 2016 3 / 13
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state
voltage
- 800 V
I
T(RMS)
RMS on-state current full sine wave; T
mb
≤ 107 °C; Fig. 1;
Fig. 2; Fig. 3
- 4 A
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 4; Fig. 5
- 25 AI
TSM
non-repetitive peak on-
state current
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms - 27 A
I
2
t I
2
t for fusing t
p
= 10 ms; SIN - 3.1 A²s
- 50 A/µsI
G
= 0.2 A
- 50 A/µs
I
G
= 70 mA - 50 A/µs
I
G
= 0.2 A - 50 A/µs
I
G
= 70 mA - 50 A/µs
I
G
= 0.2 A - 10 A/µs
I
G
= 140 mA - 10 A/µs
dI
T
/dt rate of rise of on-state
current
I
G
= 70 mA - 50 A/µs
I
GM
peak gate current - 2 A
P
GM
peak gate power - 5 W
P
G(AV)
average gate power over any 20 ms period - 0.5 W
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 125 °C
