R8C/36T-A Group 4. Electrical Characteristics
R01DS0055EJ0100 Rev.1.00 Page 38 of 58
Dec 09, 2011
Notes:
1. Definition of programming/erasure endurance
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 100, 1,000 or 10,000), each block can be erased n times. For example, if
1,024 1-byte writes are performed to different addresses in block A, a 1 Kbyte block, and then the block is erased, the
programming/erasure endurance still stands at one.
However, the same address must not be programmed more than once per erase operation (overwriting prohibited).
2. Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
3. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. In addition, averaging the erasure endurance between blocks A to D can further
reduce the actual erasure endurance. It is also advisable to retain data on the erasure endurance of each block and limit the
number of erase operations to a certain number.
4. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
command at least three times until the erase error does not occur.
5. Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
6. The data hold time includes time that the power supply is off or the clock is not supplied.
7. The data hold time includes 7,000 hours under an environment of ambient temperature 85°C.
Table 4.6 Flash Memory (Data flash Block A to Block D) Characteristics
(Vcc = 2.7 V to 5.5 V, Topr = 20°C to 85°C (N version)/40°C to 85°C (D version),
unless otherwise specified)
Symbol Parameter Conditions
Standard
Unit
Min. Typ. Max.
―
Program/erase endurance
(1)
10,000
(2)
――times
― Byte program time
(Program and erase endurance
1,000
times)
― 160 950 μs
― Byte program time
(Program and erase endurance > 1,000
times)
― 300 950 μs
― Block erase time
(Program and erase endurance
1,000
times)
― 0.2 1 s
― Block erase time
(Program and erase endurance > 1,000
times)
― 0.3 1 s
t
d(SR-SUS) Time delay from suspend request until
suspend
――3 + CPU clock
× 3 cycles
ms
― Interval from erase start/restart until
following suspend request
0 ――μs
― Time from suspend until erase restart ――30 + CPU
clock
× 1 cycle
μs
t
d(CMDRST
-READY)
Time from when command is forcibly
terminated until reading is enabled
――30 + CPU
clock
× 1 cycle
μs
― Program, erase voltage 2.7 ― 5.5 V
― Read voltage 1.8 ― 5.5 V
― Program, erase temperature
20 (N ver.)
40 (D ver.)
― 85 °C
―
Data hold time
(6)
Ambient temperature
= 55°C
(7)
20 ――year
