This is information on a product in full production.
October 2015 DocID14672 Rev 2 1/15
DVIULC6-2x6
Ultra low capacitance ESD protection
Datasheet
-
production data
Features
2-line ESD protection (at 15 kV air and contact
discharge, exceeds IEC 61000-4-2)
Protects V
BUS
when applicable
Ultra low capacitance: 0.6 pF at F = 825 MHz
Fast response time compared with varistors
Low leakage current: 0.5 µA max
RoHS compliant
Benefits
ESD standards compliance guaranteed at
device level, hence greater immunity at system
level
ESD protection of V
BUS
when applicable.
Large bandwidth to minimize impact on data
signal quality
Consistent D+ / D- signal balance:
Ultra low impact on intra- and inter-pair
skew
Matching high bit rate DVI, and IEEE 1394
requirements
Low PCB space consumption - 1.45 mm
2
for
µQFN
Low leakage current for longer operation of
battery powered devices
Higher reliability offered by monolithic
integration
500 µm pitch for µQFN 6 leads
Complies with these standards
IEC 61000-4-2 level 4
15 kV air discharge
8 kV contact discharge
MIL STD883G-Method 3015-7
Applications
DVI ports up to 1.65 Gb/s
IEEE 1394a, b, and c up to 3.2 Gb/s
USB2.0 ports up to 480 Mb/s (high speed),
backwards compatible with USB1.1 low and full
speed
Ethernet port: 10/100/1000 Mb/s
SIM card protection
Video line protection
Description
The DVIULC6-2M6 is a monolithic, application
specific discrete device dedicated to ESD
protection of high speed interfaces, such as DVI,
IEEE 1394a, b and c, USB2.0, Ethernet links and
video lines.
Its ultra low line capacitance secures a high level
of signal integrity without compromising in
protecting sensitive chips against the most
stringently characterized ESD strikes.
µQFN (pin view)
DVIULC6-2M6
www.st.com
Characteristics DVIULC6-2x6
2/15 DocID14672 Rev 2
1 Characteristics
Figure 1. Functional diagram
Table 1. Absolute ratings
Symbol Parameter Value Unit
V
PP
Peak pulse voltage
IEC61000-4-2 air discharge
IEC61000-4-2 contact discharge
MIL STD883G-Method 3015-7
±15
±15
±25
kV
T
stg
Storage temperature range -55 to +150 °C
T
j
Maximum junction temperature 125 °C
T
L
Lead solder temperature (10 seconds duration) 260 °C
Table 2. Electrical characteristics (T
amb
= 25 °C)
Symbol Parameter Test Conditions
Value
Unit
Min. Typ. Max
I
RM
Leakage current V
RM
= 5 V 0.5 µA
V
BR
Breakdown voltage between V
BUS
and GND
I
R
= 1 mA 6 V
V
CL
Clamping voltage
I
PP
= 1 A, t
p
= 8/20 µs
Any I/O pin to GND
12 V
I
PP
= 5 A, t
p
= 8/20 µs
Any I/O pin to GND
17 V
C
i/o-GND
Capacitance between I/O and GND V
R
= 0 V, F= 825 MHz 0.85 pF
ΔC
i/o-GND
Capacitance variation between I/O
and GND
V
R
= 0 V, F= 1 MHz 0.02 pF
C
i/o-i/o
Capacitance between I/O V
R
= 0 V, F= 825 MHz 0.5 pF
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*1'
9
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When used with a DVI application, Pin 5 should not be connected to
protect against backdrive current flow on data lines.
DocID14672 Rev 2 3/15
DVIULC6-2x6 Characteristics
15
Figure 2. Line capacitance versus line voltage
(typical values)
Figure 3. Line capacitance versus frequency
(typical values) DVIULC6-2M6
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
F=825MHz
V
osc
=
500mV
RMS
V
BUS
OPEN
T
j
=25
°
C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Data line voltage (v)
C
I/O
- GND
C(pF)
0
V
osc
=30mV
RMS
T
j
=25
°C
V
I-O/GND
= 0V
F(MHz)
1 10 100 1000 10000
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
C(pF)
C
I/O
- GND
C
I/O
-C
I/O
V OPEN
BUS
Figure 4. Frequency response (typical values)
DVIULC6-2M6
Figure 5. Relative variation of leakage current
versus junction temperature (typical values)
S21(db)
300.0k 1.0M 3.0M 10.0M 30.0M 100.0M 300.0M 1.0G 3.0G
- 16.00
- 12.00
- 8.00
- 4.00
0.00
Fc=5.9GHz
F(Hz)
1
2
3
4
5
25 50 75 100 125
I[T
RM j
] / I [T
RM j
=25°C]
T (°C)
j
Figure 6. Eye diagram at 1.65 Gbps
amplitude 500 mV
PCB + DVIULC6-2M6
Figure 7. Eye diagram at 3.2 Gbps
amplitude 500 mV
PCB + DVIULC6-2M6
Horizontal: 100 ps/div
Vertical: 200 mV/div

DVIULC6-2P6

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
TVS DIODE 5V 17V SOT666
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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