NLAST44599
http://onsemi.com
5
AC ELECTRICAL CHARACTERISTICS (Input t
r
= t
f
= 3.0 ns)
Guaranteed Maximum Limit
V
CC
V
IS
*555C to 255C t855C t1255C
Symbol Parameter Test Conditions (V) (V) Min Typ* Max Min Max Min Max Unit
t
ON
Turn−On Time
(Figures 12 and 13)
R
L
= 300 C
L
= 35 pF
(Figures 5 and 6)
2.5
3.0
4.5
5.5
2.0
2.0
3.0
3.0
5
5
2
2
23
16
11
9
35
24
16
14
5
5
2
2
38
27
19
17
5
5
2
2
41
30
22
20
ns
t
OFF
Turn−Off Time
(Figures 12 and 13)
R
L
= 300 C
L
= 35 pF
(Figures 5 and 6)
2.5
3.0
4.5
5.5
2.0
2.0
3.0
3.0
1
1
1
1
7
5
4
3
12
10
6
5
1
1
1
1
15
13
9
8
1
1
1
1
18
16
12
11
ns
t
BBM
Minimum Break−Before−Make
Time
V
IS
= 3.0 V (Figure 4)
R
L
= 300 C
L
= 35 pF
2.5
3.0
4.5
5.5
2.0
2.0
3.0
3.0
1
1
1
1
12
11
6
5
1
1
1
1
1
1
1
1
ns
*Typical Characteristics are at 25°C.
Typical @ 25, VCC = 5.0 V
C
IN
C
NO
or C
NC
C
COM
C
(ON)
Maximum Input Capacitance, Select Input
Analog I/O (Switch Off)
Common I/O (Switch Off)
Feedthrough (Switch On)
8
10
10
20
pF
ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)
V
CC
Typical
Symbol Parameter Condition V 255C Unit
BW Maximum On−Channel *3 dB Bandwidth or
Minimum Frequency Response
(Figure 11)
V
IN
= 0 dBm
V
IN
centered between V
CC
and GND
(Figure 7)
3.0
4.5
5.5
145
170
175
MHz
V
ONL
Maximum Feedthrough On Loss V
IN
= 0 dBm @ 100 kHz to 50 MHz
V
IN
centered between V
CC
and GND
(Figure 7)
3.0
4.5
5.5
−3
−3
−3
dB
V
ISO
Off−Channel Isolation
(Figure 10)
f = 100 kHz; V
IS
= 1 V RMS
V
IN
centered between V
CC
and GND
(Figure 7)
3.0
4.5
5.5
−93
−93
−93
dB
Q Charge Injection Select Input to Common I/O
(Figure 15)
V
IN
=
V
CC
to GND, F
IS
= 20 kHz
t
r
= t
f
= 3 ns
R
IS
= 0 , C
L
= 1000 pF
Q = C
L
* V
OUT
(Figure 8)
3.0
5.5
1.5
3.0
pC
THD Total Harmonic Distortion
THD ) Noise
(Figure 14)
F
IS
= 20 Hz to 100 kHz, R
L
= Rgen = 600 ,
C
L
= 50 pF
V
IS
= 5.0 V
PP
sine wave 5.5 0.1
%
VCT Channel to Channel Crosstalk f = 100 kHz; V
IS
= 1 V RMS
V
IN
centered between V
CC
and GND
(Figure 7)
5.5
3.0
−90
−90
dB
