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SI4590DY-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P14
Si4590DY
www.vishay.com
Vishay Siliconix
S14-0146-Rev. A, 27-Jan-14
1
Document Number: 62937
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N- and P-Channel 100 V (D-S) MOSFET
Ordering Information:
Si4590DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET
®
Power MOSFET
• 100 % R
g
and UIS tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• H bridge / DC-AC inverter
- Brushless DC motors
Notes
a. Based on T
F
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 90 °C/W (n-channel) and 90 °C/W (p-channel).
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
() MAX. I
D
(A)
a
Q
g
(TYP.)
N-Channel 100
0.057 at V
GS
= 10 V 5.6
4
0.072 at V
GS
= 4.5 V 5
P-Channel -100
0.183 at V
GS
= -10 V -3.4
11.6
0.205 at V
GS
= -4.5 V -3.2
Top View
SO-8 Dual
1
S
1
2
G
1
3
S
2
1
2
G
3
S
2
4
G
2
D
1
7
D
2
6
D
2
5
D
1
8
N-Channel MOSFET
D
1
G
1
S
1
S
2
G
2
D
2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL N-CHANNEL P-CHANNEL UNIT
Drain-Source Voltage V
DS
100 -100
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
F
= 25 °C
I
D
5.6 -3.4
A
T
F
= 70 °C 4.5 -2.7
T
A
= 25 °C 4.5
b,c
-2.5
b,c
T
A
= 70 °C 3.6
b,c
-2
b,c
Pulsed Drain Current (100 μs Pulse Width) I
DM
30 -20
Source-Drain Current Diode Current
T
F
= 25 °C
I
S
3-3.5
T
A
= 25 °C 2
b,c
-1.9
b,c
Pulsed Source-Drain Current (100 μs Pulse Width) I
SM
30 -20
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
5-20
Single Pulse Avalanche Energy E
AS
1.3 20 mJ
Maximum Power Dissipation
T
F
= 25 °C
P
D
3.6 4.2
W
T
F
= 70 °C 2.3 2.7
T
A
= 25 °C 2.3
b,c
2.3
b,c
T
A
= 70 °C 1.5
b,c
1.5
b,c
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to 150 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL
N-CHANNEL P-CHANNEL
UNIT
TYP. MAX. TYP. MAX.
Maximum Junction-to-Ambient
b,d
t 10 s R
thJA
35 55 33 55
°C/W
Maximum Junction-to-Foot (Drain) Steady State R
thJF
20 35 17 30
Si4590DY
www.vishay.com
Vishay Siliconix
S14-0146-Rev. A, 27-Jan-14
2
Document Number: 62937
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 μA N-Ch 100 - -
V
V
GS
= 0 V, I
D
= -250 μA P-Ch -100 - -
V
DS
Temperature Coefficient V
DS
/T
J
I
D
= 250 μA N-Ch - 70 -
mV/°C
I
D
= -250 μA P-Ch - -103 -
V
GS(th)
Temperature Coefficient V
GS(th)
/T
J
I
D
= 250 μA N-Ch - -5.7 -
I
D
= -250 μA P-Ch - 4.5 -
Gate Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA N-Ch 1.5 - 2.5
V
V
DS
= V
GS
, I
D
= -250 μA P-Ch -1.5 - -2.5
Gate-Body Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
N-Ch - - 100
nA
P-Ch - - -100
Zero Gate Voltage Drain Current I
DSS
V
DS
= 100 V, V
GS
= 0 V N-Ch - - 1
μA
V
DS
= -100 V, V
GS
= 0 V P-Ch - - -1
V
DS
= 100 V, V
GS
= 0 V, T
J
= 55 °C N-Ch - - 10
V
DS
= -100 V, V
GS
= 0 V, T
J
= 55 °C P-Ch - - -10
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V N-Ch 10 - -
A
V
DS
= -5 V, V
GS
= -10 V P-Ch -10 - -
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 2 A N-Ch - 0.047 0.057
V
GS
= -10 V, I
D
= -2 A P-Ch - 0.150 0.183
V
GS
= 4.5 V, I
D
= 1.5 A N-Ch - 0.059 0.072
V
GS
= -4.5 V, I
D
= -1 A P-Ch - 0.165 0.205
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 2 A N-Ch - 9 -
S
V
DS
= -15 V, I
D
= -2 A P-Ch - 9.3 -
Dynamic
a
Input Capacitance C
iss
N-Channel
V
DS
= 50 V, V
GS
= 0 V, f = 1 MHz
P-Channel
V
DS
= -50 V, V
GS
= 0 V, f = 1 MHz
N-Ch - 360 -
pF
P-Ch - 1150 -
Output Capacitance C
oss
N-Ch - 130 -
P-Ch - 65 -
Reverse Transfer Capacitance C
rss
N-Ch - 20 -
P-Ch - 40 -
Total Gate Charge Q
g
V
DS
= 50 V, V
GS
= 10 V, I
D
= 4.5 A N-Ch - 7.5 11.5
nC
V
DS
= -50 V, V
GS
= -10 V, I
D
= -5 A P-Ch - 24 36
N-Channel
V
DS
= 50 V, V
GS
= 4.5 V, I
D
= 4.5 A
P-Channel
V
DS
= -50 V, V
GS
= -4.5 V, I
D
= -5 A
N-Ch - 4 6
P-Ch - 11.6 18
Gate-Source Charge Q
gs
N-Ch - 1.2 -
P-Ch - 3.8 -
Gate-Drain Charge Q
gd
N-Ch - 2 -
P-Ch - 5 -
Gate Resistance R
g
f = 1 MHz
N-Ch 0.6 3.3 6.6
P-Ch 3 13 26
Si4590DY
www.vishay.com
Vishay Siliconix
S14-0146-Rev. A, 27-Jan-14
3
Document Number: 62937
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Dynamic
a
Turn-On Delay Time t
d(on)
N-Channel
V
DD
= 50 V, R
L
= 13.8
I
D
3.6 A, V
GEN
= 10 V, R
g
= 1
P-Channel
V
DD
= -50 V, R
L
= 12.5
I
D
-4 A, V
GEN
= -10 V, R
g
= 1
N-Ch - 5 10
ns
P-Ch - 7 15
Rise Time t
r
N-Ch - 11 20
P-Ch - 11 20
Turn-Off Delay Time t
d(off)
N-Ch - 12 25
P-Ch - 65 130
Fall Time t
f
N-Ch - 6 15
P-Ch - 20 40
Turn-On Delay Time t
d(on)
N-Channel
V
DD
= 50 V, R
L
= 13.8
I
D
3.6 A, V
GEN
= 4.5 V, R
g
= 1
P-Channel
V
DD
= -50 V, R
L
= 12.5
I
D
-4 A, V
GEN
= -4.5 V, R
g
= 1
N-Ch - 32 65
P-Ch - 55 110
Rise Time t
r
N-Ch - 73 150
P-Ch - 80 160
Turn-Off Delay Time t
d(off)
N-Ch - 14 30
P-Ch - 42 85
Fall Time t
f
N-Ch - 12 25
P-Ch - 25 50
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
T
F
= 25 °C
N-Ch - - 3
A
P-Ch - - -3.5
Pulse Diode Forward Current
a
I
SM
N-Ch - - 30
P-Ch - - -20
Body Diode Voltage V
SD
I
S
= 3.6 A N-Ch - 0.83 1.2
V
I
S
= -4 A P-Ch - -0.8 -1.2
Body Diode Reverse Recovery Time t
rr
N-Channel
I
F
= 3.6 A, dI/dt = 100 A/μs, T
J
= 25 °C
P-Channel
I
F
= -4 A, dI/dt = -100 A/μs, T
J
= 25 °C
N-Ch - 30 60
ns
P-Ch - 42 85
Body Diode Reverse Recovery Charge Q
rr
N-Ch - 27 55
nC
P-Ch - 93 190
Reverse Recovery Fall Time t
a
N-Ch - 19 -
ns
P-Ch - 36 -
Reverse Recovery Rise Time t
b
N-Ch - 11 -
P-Ch - 6 -
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
P1-P3P4-P6P7-P9P10-P12P13-P14

SI4590DY-T1-GE3

Mfr. #:
Buy SI4590DY-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -100V Vds 20V Vgs SO-8 N&P PAIR
Lifecycle:
New from this manufacturer.
Delivery:
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