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SI4590DY-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P14
Si4590DY
www.vishay.com
Vishay Siliconix
S14-0146-Rev. A, 27-Jan-14
4
Document Number: 62937
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
4
8
12
16
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0
I
D
-
Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 4 V
V
GS
= 10 V thru 5 V
V
GS
= 3 V
0
0.03
0.06
0.09
0.12
0 4 8 12 16 20
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
0
2
4
6
8
10
0 2 4 6 8 10
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
= 80 V
V
DS
= 25 V
V
DS
= 50 V
I
D
= 4.5 A
C
°
C
°
C
°
0
100
200
300
400
500
600
0 20 40 60 80 100
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
- 50 - 25 0 25 50 75 100 125 150
R
DS(on)
- On-Resistance
(Normalized)
T
J
- Junction Temperature (°C)
V
GS
= 4.5 V
I
D
= 2 A
V
GS
= 10V
Si4590DY
www.vishay.com
Vishay Siliconix
S14-0146-Rev. A, 27-Jan-14
5
Document Number: 62937
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
1.3
1.5
1.7
1.9
2.1
2.3
2.5
- 50 - 25 0 25 50 75 100 125 150
V
GS(th)
(V)
T
J
- Temperature (°C)
I
D
= 250 μA
0
0.03
0.06
0.09
0.12
0.15
0 2 4 6 8 10
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 125 °C
T
J
= 25 °C
I
D
= 2 A
0
5
10
15
20
25
30
0.001 0.01 0.1 1 10 100 1000
Power (W)
Time (s)
0.001
0.01
0.1
1
10
100
0.1 1 10 100 1000
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
10 s
I
D(on)
Limited
I
DM
Limited
100 ms
Limited by R
DS
(
on
)
*
1 ms
T
A
= 25 °C
BVDSS Limited
10 ms
100 μs
1 s
DC
Si4590DY
www.vishay.com
Vishay Siliconix
S14-0146-Rev. A, 27-Jan-14
6
Document Number: 62937
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Current Derating*
Power Derating, Junction-to-Foot
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
0.0
2.0
4.0
6.0
8.0
0 25 50 75 100 125 150
I
D
- Drain Current (A)
T
F
- Foot Temperature (°C)
0
1
2
3
4
5
0 25 50 75 100 125 150
Power (W)
T
F
- Foot Temperature (°C)
P1-P3P4-P6P7-P9P10-P12P13-P14

SI4590DY-T1-GE3

Mfr. #:
Buy SI4590DY-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -100V Vds 20V Vgs SO-8 N&P PAIR
Lifecycle:
New from this manufacturer.
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