Si4590DY
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Vishay Siliconix
S14-0146-Rev. A, 27-Jan-14
8
Document Number: 62937
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P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current and Gate Voltage
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
4
8
12
16
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 4 V
V
= 10 V thru 5 V
V
GS
= 3 V
0
0.05
0.10
0.15
0.20
0.25
0 4 8 12 16 20
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
0
2
4
6
8
10
0 5 10 15 20 25
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
DS
= 80 V
V
DS
= 25 V
V
DS
= 50 V
I
D
= 5 A
0
2
4
6
8
10
0.0 1.0 2.0 3.0 4.0
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
0
300
600
900
1200
1500
1800
0 20 40 60 80 100
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
C
iss
C
C
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
- 50 - 25 0 25 50 75 100 125 150
R
DS(on)
- On-Resistance
(Normalized)
T
J
- Junction Temperature (°C)
V
GS
= 4.5 V
I
D
= 2 A
V
GS
= 10V
