NTHL040N65S3F
www.onsemi.com
4
0.2 1 10 20
1
10
100
200
*Notes:
1. 250
m
s Pulse Test
2. T
C
= 25
o
C
I
D
, Drain Current[A]
V
DS
, Drain−Source Voltage[V]
V
GS
= 10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
1
10
100
300
−55
o
C
150
o
C
*Notes:
1. V
DS
= 20V
2. 250
ms Pulse Test
25
o
C
I
D
, Drain Current[A]
V
GS
, Gate−Source Voltage[V]
0 50 100 150 200
0.02
0.03
0.04
0.05
*Note: T
C
= 25
o
C
V
GS
= 20V
V
GS
= 10V
R
DS(ON)
,
Drain−Source On−Resistance [
W]
I
D
, Drain Current [A]
0.0 0.5 1.0 1.5 2.0
0.001
0.01
0.1
1
10
100
1000
*Notes:
1. V
GS
= 0V
2. 250
m
s Pulse Test
150
o
C
I
S
, Reverse Drain Current [A]
V
SD
, Body Diode Forward Voltage [V]
25
o
C
−55
o
C
0
2
4
6
8
10
V
DS
= 400V
V
DS
= 130V
*Note: I
D
= 32.5A
V
GS
, Gate−Source Voltage [V]
Qg, Total Gate Charge [nC]
0.1 1 10 100 1000
0.1
1
10
100
1000
10000
100000
1000000
C
oss
C
iss
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
*Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
Capacitances [pF]
V
DS
, Drain−Source Voltage [V]
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On−Resistance Variation
vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
0 40 80 120 160
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