BSC

BSC047N08NS3 G vs BSC047N08NS3GATMA1 vs BSC048N025S G

 
PartNumberBSC047N08NS3 GBSC047N08NS3GATMA1BSC048N025S G
DescriptionMOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3MOSFET N-CH 25V 89A TDSON-8
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTDSON-8TDSON-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage80 V80 V-
Id Continuous Drain Current100 A100 A-
Rds On Drain Source Resistance3.9 mOhms3.9 mOhms-
Vgs th Gate Source Threshold Voltage2 V2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge69 nC69 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation125 W125 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height1.27 mm1.27 mm-
Length5.9 mm5.9 mm-
SeriesOptiMOS 3OptiMOS 3-
Transistor Type1 N-Channel1 N-Channel-
Width5.15 mm5.15 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min60 S60 S-
Fall Time11 ns11 ns-
Product TypeMOSFETMOSFET-
Rise Time17 ns17 ns-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time44 ns44 ns-
Typical Turn On Delay Time18 ns18 ns-
Part # AliasesBSC047N08NS3GATMA1 BSC47N8NS3GXT SP000436372BSC047N08NS3 BSC47N8NS3GXT G SP000436372-
Unit Weight0.006349 oz0.004310 oz-
  • Start with
  • BSC 999
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSC0503NSIATMA1 MOSFET LV POWER MOS
BSC0502NSIATMA1 MOSFET LV POWER MOS
BSC0504NSIATMA1 MOSFET LV POWER MOS
BSC047N08NS3 G MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
BSC050N03LS G MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3
BSC050N04LS G MOSFET N-Ch 40V 85A TDSON-8 OptiMOS 3
BSC047N08NS3GATMA1 MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
BSC050N03LSGATMA1 MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3
BSC050N04LSGATMA1 MOSFET N-Ch 40V 85A TDSON-8 OptiMOS 3
BSC050N03LSGXT MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3
BSC050N03MS G MOSFET N-Ch 30V 80A TDSON-8 OptiMOS 3M
BSC0501NSIATMA1 MOSFET LV POWER MOS
BSC0500NSIATMA1 MOSFET LV POWER MOS
BSC047N08NS3GATMA1 MOSFET N-CH 80V 100A TDSON-8
BSC0500NSIATMA1 MOSFET N-CH 30V 35A TDSON-8
BSC050N03LSGATMA1 MOSFET N-CH 30V 80A TDSON-8
BSC050N03MSGATMA1 MOSFET N-CH 30V 80A TDSON-8
BSC050N04LSGATMA1 MOSFET N-CH 40V 85A TDSON-8
BSC0501NSIATMA1 MOSFET N-CH 30V 29A 8TDSON
BSC0502NSIATMA1 MOSFET N-CH 30V 26A TDSON-8
BSC0503NSIATMA1 MOSFET N-CH 30V 22A TDSON-8
BSC0504NSIATMA1 MOSFET N-CH 30V 21A TDSON-8
BSC048N025S G MOSFET N-CH 25V 89A TDSON-8
BSC047N08NS3 G MOSFET, N CHANNEL, 80V, 100A, PG-TSDSON, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:80V, On Resistance Rds(on):0.0039ohm, Rds(on) Test Voltage Vgs:1
BSC047N08NS3G Trans MOSFET N-CH 80V 18A 8-Pin TDSON EP (Alt: BSC047N08NS3 G)
BSC047N08NS3GS New and Original
BSC047N08NSG New and Original
BSC048N025SG New and Original
BSC048N025SGATMA1 New and Original
BSC0502NSI New and Original
BSC0504NSI New and Original
BSC050N03LS New and Original
BSC050N03LS G Trans MOSFET N-CH 30V 18A 8-Pin TDSON EP
BSC050N03LSG Trans MOSFET N-CH 30V 18A 8-Pin TDSON EP
BSC050N03LSG 08 New and Original
BSC050N03LSGATMA1 , TDA8 New and Original
BSC050N03LSGXT Power Field-Effect Transistor, 18A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BSC050N03MS New and Original
BSC050N03MS G MOSFET N-Ch 30V 80A TDSON-8 OptiMOS 3M
BSC050N03MSG 30V,80A,N-channel power MOSFET
BSC050N03MSGATMA1 , TDA8 New and Original
BSC050N03S New and Original
BSC050N04LS New and Original
BSC050N04LS G New and Original
BSC050N04LSG Trans MOSFET N-CH 40V 18A 8-Pin TDSON EP (Alt: BSC050N04LS G)
BSC050N04LSGATMA1 , TDA8 New and Original
BSC050N08NS5 New and Original
BSC050N0LSG New and Original
BSC0500NSIATMA1-CUT TAPE New and Original
BSC050N03LSGATMA1-CUT TAPE New and Original
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