| PartNumber | BSC019N04LS | BSC019N02KS G | BSC019N02KSGAUMA1 |
| Description | MOSFET DIFFERENTIATED MOSFETS | MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2 | MOSFET LV POWER MOS |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TDSON-8 | TDSON-8 | TDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | 20 V | - |
| Id Continuous Drain Current | 100 A | 30 A | - |
| Rds On Drain Source Resistance | 1.5 mOhms | 1.95 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 20 V | 12 V | - |
| Qg Gate Charge | 57 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 78 W | 2.8 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 1.27 mm | 1.27 mm | 1.27 mm |
| Length | 5.9 mm | 5.9 mm | 5.9 mm |
| Series | OptiMOS 5 | OptiMOS 2 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 5.15 mm | 5.15 mm | 5.15 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 95 S | - | - |
| Fall Time | 4 ns | 8 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 4 ns | 187 ns | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 26 ns | 95 ns | - |
| Typical Turn On Delay Time | 6 ns | 15 ns | - |
| Part # Aliases | BSC019N04LSATMA1 SP001067012 | BSC019N02KSGAUMA1 BSC19N2KSGXT SP000307376 | BSC019N02KS BSC19N2KSGXT G SP000307376 |
| Moisture Sensitive | - | Yes | - |