PartNumber | BSC019N04LS | BSC019N02KS G | BSC019N02KSGAUMA1 |
Description | MOSFET DIFFERENTIATED MOSFETS | MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2 | MOSFET LV POWER MOS |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TDSON-8 | TDSON-8 | TDSON-8 |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 40 V | 20 V | - |
Id Continuous Drain Current | 100 A | 30 A | - |
Rds On Drain Source Resistance | 1.5 mOhms | 1.95 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
Vgs Gate Source Voltage | 20 V | 12 V | - |
Qg Gate Charge | 57 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 78 W | 2.8 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | OptiMOS | OptiMOS | OptiMOS |
Packaging | Reel | Reel | Reel |
Height | 1.27 mm | 1.27 mm | 1.27 mm |
Length | 5.9 mm | 5.9 mm | 5.9 mm |
Series | OptiMOS 5 | OptiMOS 2 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 5.15 mm | 5.15 mm | 5.15 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Forward Transconductance Min | 95 S | - | - |
Fall Time | 4 ns | 8 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 4 ns | 187 ns | - |
Factory Pack Quantity | 5000 | 5000 | - |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 26 ns | 95 ns | - |
Typical Turn On Delay Time | 6 ns | 15 ns | - |
Part # Aliases | BSC019N04LSATMA1 SP001067012 | BSC019N02KSGAUMA1 BSC19N2KSGXT SP000307376 | BSC019N02KS BSC19N2KSGXT G SP000307376 |
Moisture Sensitive | - | Yes | - |