BSC019N04LSATMA1

Mfr. #:: BSC019N04LSATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET MV POWER MOS
Lifecycle:: New from this manufacturer.
Datasheet:: BSC019N04LSATMA1 Datasheet
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More Information:: BSC019N04LSATMA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TDSON-8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 40 V

Id - Continuous Drain Current:: 100 A

Rds On - Drain-Source Resistance:: 1.5 mOhms

Vgs th - Gate-Source Threshold Voltage:: 1.2 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 57 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 78 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: OptiMOS

Packaging:: Reel

Height:: 1.27 mm

Length:: 5.9 mm

Series:: OptiMOS 5

Transistor Type:: 1 N-Channel

Width:: 5.15 mm

Brand:: Infineon Technologies

Fall Time:: 4 ns

Product Type:: MOSFET

Rise Time:: 4 ns

Factory Pack Quantity:: 5000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 26 ns

Typical Turn-On Delay Time:: 6 ns

Part # Aliases:: BSC019N04LS SP001067012

Tags: BSC019N04L, BSC019N04, BSC019, BSC01, BSC0, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC019N04LSATMA1 Description

***ure Electronics: BSC019N04LS Series 40 V 27 A SMT OptiMOSTM Power-MOSFET - PG-TDSON-8

***nell: MOSFET, N-CH, 40V, 100A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0015ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 78W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)

***ineon SCT: OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops, PG-TDSON-8, RoHS

***ineon: OptiMOS 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applictions; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Isolated DC-DC converters; Motor control; Or-ing switches

*** Source Electronics: Trans MOSFET N-CH 40V 120A Automotive 3-Pin(2+Tab) D2PAK T/R / OptiMOS-T2 Power-Transistor

***ure Electronics: Single N-Channel 40 V 1.8 mOhm 134 nC OptiMOS Power Mosfet - PG-TO263-3

***nell: MOSFET, AEC-Q101, N-CH, 40V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.00188ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 158W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS-T2 Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

*** Stop Electro: Power Field-Effect Transistor, 120A I(D), 40V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon: Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 40V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 40V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.

***ineon SCT: 40V, N-Ch, 1.5 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS

***ure Electronics: Single N-Channel 40 V 1.5 mOhm 135 nC OptiMOS Power Mosfet - D2PAK

***ark: Mosfet, Aec-Q101, N-Ch, 40V, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.00135Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

*** Stop Electro: Power Field-Effect Transistor, 120A I(D), 40V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon: Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 40V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 40V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.

***Yang: Trans MOSFET N-CH 40V 100A 8-Pin TDSON T/R - Product that comes on tape, but is not reeled

***ure Electronics: Single N-Channel 40 V 2.2 mOhm 37 nC OptiMOS Power Mosfet - TDSON-8

***ark: MOSFET, N-CH, 40V, 100A, 150DEG C, 69W; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes

***ineon SCT: OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops, PG-TDSON-8, RoHS

***nell: MOSFET, N-CH, 40V, 100A, TDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0018ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 69W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: OptiMOS 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applictions; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Isolated DC-DC converters; Motor control; Or-ing switches

***Yang: FDMS015N04B ON Semiconductor Transistors MOSFETs N-CH 40V 31.3A 8-Pin PQFN EP T/R - Arrow.com

***emi: N-Channel PowerTrench® MOSFET 40V, 100A, 1.5mΩ

***r Electronics: Power Field-Effect Transistor, 31.3A I(D), 40V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

*** Source Electronics: MOSFET N-CH 30V 28A POWER56 / Trans MOSFET N-CH Si 30V 28A 8-Pin PQFN EP T/R

***emi: N-Channel PowerTrench® MOSFET 30V, 160A, 2.0mΩ

***r Electronics: Power Field-Effect Transistor, 28A I(D), 30V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***el Electronic: Embedded - Microcontrollers 3 (168 Hours) 64-LQFP 48 10K x 8 Internal DMA, LVD, POR, PWM, WDT Surface Mount Tray 32-Bit MCU 32-Bit RX23T RX CISC 128KB Flash 3.3V/5V 64-Pin LFQFP Tray

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

***r Electronics: Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***icroelectronics: Automotive-grade N-channel 40 V, 1.9 mOhm typ., 120 A STripFET F6 Power MOSFET in H2PAK-6 package

***et: Trans MOSFET N-CH 40V 120A 6-Pin H2PAK T/R

***icroelectronics SCT: Automotive Power Discrete, 40V, 120A, H2PAK-6, Tape and Reel

BSC019N04LSATMA1 More Information

OptiMOS™ 5 Power MOSFETs: Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.

Market price

Part #	Mfg.	Description	Stock	Price
BSC019N04LSATMA1 DISTI # 31438958	Infineon Technologies AG	Trans MOSFET N-CH 40V 27A 8-Pin TDSON T/R RoHS: Compliant	5000	5000:$0.5216
BSC019N04LSATMA1 DISTI # BSC019N04LSATMA1-ND	Infineon Technologies AG	MOSFET N-CH 40V 27A 8TDSON RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Temporarily Out of Stock	5000:$0.7166
BSC019N04LSATMA1 DISTI # V36:1790_06383850	Infineon Technologies AG	Trans MOSFET N-CH 40V 27A 8-Pin TDSON T/R RoHS: Compliant	0	5000000:$0.6116 2500000:$0.6119 500000:$0.6450 50000:$0.7062 5000:$0.7166
BSC019N04LSATMA1 DISTI # V72:2272_06383850	Infineon Technologies AG	Trans MOSFET N-CH 40V 27A 8-Pin TDSON T/R RoHS: Compliant	0
BSC019N04LSATMA1 DISTI # BSC019N04LSATMA1	Infineon Technologies AG	Trans MOSFET N-CH 40V 27A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC019N04LSATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	50000:$0.5329 30000:$0.5429 20000:$0.5619 10000:$0.5829 5000:$0.6049
BSC019N04LSATMA1 DISTI # SP001067012	Infineon Technologies AG	Trans MOSFET N-CH 40V 27A 8-Pin TDSON T/R (Alt: SP001067012) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Europe - 0	50000:€0.4949 30000:€0.5329 20000:€0.5779 10000:€0.6299 5000:€0.7699
BSC019N04LSATMA1 DISTI # BSC019N04LS	Infineon Technologies AG	Trans MOSFET N-CH 40V 27A 8-Pin TDSON T/R (Alt: BSC019N04LS) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Asia - 0	250000:$0.4872 125000:$0.4935 50000:$0.4999 25000:$0.5064 15000:$0.5201 10000:$0.5346 5000:$0.5499
BSC019N04LSATMA1 DISTI # 49AC0104	Infineon Technologies AG	MOSFET, N-CH, 40V, 100A, TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0015ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power RoHS Compliant: Yes	4824	1000:$0.7700 500:$0.9280 250:$0.9940 100:$1.0600 50:$1.1500 25:$1.2400 10:$1.3200 1:$1.5600
BSC019N04LS DISTI # 726-BSC019N04LS	Infineon Technologies AG	MOSFET DIFFERENTIATED MOSFETS RoHS: Compliant	4177	1:$1.5400 10:$1.3100 100:$1.0500 500:$0.9190 1000:$0.7620
BSC019N04LSATMA1 DISTI # 726-BSC019N04LSATMA1	Infineon Technologies AG	MOSFET MV POWER MOS RoHS: Compliant	5000	1:$1.5400 10:$1.3100 100:$1.0500 500:$0.9190 1000:$0.7620 2500:$0.7090 5000:$0.6830 10000:$0.6570
BSC019N04LSATMA1 DISTI # 2839429	Infineon Technologies AG	MOSFET, N-CH, 40V, 100A, TDSON-8	4814	100:£0.9510 10:£1.2500 1:£1.5800
BSC019N04LSATMA1 DISTI # 2839429	Infineon Technologies AG	MOSFET, N-CH, 40V, 100A, TDSON-8 RoHS: Compliant	4824	5000:$1.0700 1000:$1.1200 500:$1.1900 250:$1.3700 100:$1.6200 25:$1.9900 5:$2.2900

Image	Part #	Description
	Mfr.#: BSC019N06NSATMA1 OMO.#: OMO-BSC019N06NSATMA1	MOSFET DIFFERENTIATED MOSFETS
	Mfr.#: BSC019N04LSATMA1 OMO.#: OMO-BSC019N04LSATMA1	MOSFET MV POWER MOS
	Mfr.#: BSC019N02KSGAUMA1 OMO.#: OMO-BSC019N02KSGAUMA1	MOSFET LV POWER MOS
	Mfr.#: BSC019N02KS OMO.#: OMO-BSC019N02KS-1190	New and Original
	Mfr.#: BSC019N04NS OMO.#: OMO-BSC019N04NS-1190	New and Original
	Mfr.#: BSC019N04NS G(SP00038829 OMO.#: OMO-BSC019N04NS-G-SP00038829-1190	New and Original
	Mfr.#: BSC019N04NS G) OMO.#: OMO-BSC019N04NS-G--1190	New and Original
	Mfr.#: BSC019N04NSG OMO.#: OMO-BSC019N04NSG-1190	Trans MOSFET N-CH 40V 29A 8-Pin TDSON (Alt: SP000388299)
	Mfr.#: BSC019N04LSTATMA1 OMO.#: OMO-BSC019N04LSTATMA1-INFINEON-TECHNOLOGIES	DIFFERENTIATED MOSFETS
	Mfr.#: BSC019N06NSATMA1 OMO.#: OMO-BSC019N06NSATMA1-INFINEON-TECHNOLOGIES	DIFFERENTIATED MOSFETS

BSC019N04LSATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes