BSC019N04

BSC019N04LS vs BSC019N04LSATMA1 vs BSC019N04LSTATMA1

 
PartNumberBSC019N04LSBSC019N04LSATMA1BSC019N04LSTATMA1
DescriptionMOSFET DIFFERENTIATED MOSFETSMOSFET MV POWER MOSDIFFERENTIATED MOSFETS
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTDSON-8TDSON-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage40 V40 V-
Id Continuous Drain Current100 A100 A-
Rds On Drain Source Resistance1.5 mOhms1.5 mOhms-
Vgs th Gate Source Threshold Voltage1.2 V1.2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge57 nC57 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation78 W78 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height1.27 mm1.27 mm-
Length5.9 mm5.9 mm-
SeriesOptiMOS 5OptiMOS 5-
Transistor Type1 N-Channel1 N-Channel-
Width5.15 mm5.15 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min95 S--
Fall Time4 ns4 ns-
Product TypeMOSFETMOSFET-
Rise Time4 ns4 ns-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time26 ns26 ns-
Typical Turn On Delay Time6 ns6 ns-
Part # AliasesBSC019N04LSATMA1 SP001067012BSC019N04LS SP001067012-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BSC019N04LS MOSFET DIFFERENTIATED MOSFETS
BSC019N04NS G MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
BSC019N04LSATMA1 MOSFET MV POWER MOS
BSC019N04NSGATMA1 MOSFET N-CH 40V 100A TDSON-8
BSC019N04LSATMA1 MOSFET N-CH 40V 27A 8TDSON
BSC019N04LSTATMA1 DIFFERENTIATED MOSFETS
BSC019N04NS New and Original
BSC019N04NS G(SP00038829 New and Original
BSC019N04NS G) New and Original
BSC019N04NS3G New and Original
BSC019N04NSG Trans MOSFET N-CH 40V 29A 8-Pin TDSON (Alt: SP000388299)
BSC019N04NS G RF Bipolar Transistors MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
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