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| PartNumber | BSD223PH6327XTSA1 | BSD223PH6327 | BSD223PH6327. |
| Description | MOSFET P-Ch DPAK-2 | Small Signal Field-Effect Transistor, 0.39A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Manufacturer | Infineon | Infineon Technologies | - |
| Product Category | MOSFET | FETs - Arrays | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PG-SOT-363-6 | - | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 390 mA | - | - |
| Rds On Drain Source Resistance | 1.2 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 600 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Qg Gate Charge | - 500 pC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 250 mW | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Alternate Packaging | - |
| Height | 0.9 mm | - | - |
| Length | 2 mm | - | - |
| Series | BSD223 | OptiMOS | - |
| Transistor Type | 2 P-Channel | 2 P-Channel | - |
| Width | 1.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 350 mS | - | - |
| Fall Time | 3.2 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 5 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 5.1 ns | - | - |
| Typical Turn On Delay Time | 3.8 ns | - | - |
| Part # Aliases | BSD223P BSD223PH6327XT H6327 SP000924074 | - | - |
| Unit Weight | 0.010582 oz | - | - |
| Part Aliases | - | BSD223P BSD223PH6327XT H6327 SP000924074 | - |
| Package Case | - | SOT-363-6 | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | * | - |
| Supplier Device Package | - | * | - |
| FET Type | - | 2 P-Channel (Dual) | - |
| Power Max | - | 250mW | - |
| Drain to Source Voltage Vdss | - | 20V | - |
| Input Capacitance Ciss Vds | - | 56pF @ 15V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 390mA | - |
| Rds On Max Id Vgs | - | 1.2 Ohm @ 390mA, 4.5V | - |
| Vgs th Max Id | - | 1.2V @ 1.5μA | - |
| Gate Charge Qg Vgs | - | 0.62nC @ 4.5V | - |
| Pd Power Dissipation | - | 250 mW | - |
| Vgs Gate Source Voltage | - | -12 V | - |
| Id Continuous Drain Current | - | - 390 mA | - |
| Vds Drain Source Breakdown Voltage | - | - 20 V | - |
| Rds On Drain Source Resistance | - | 1.2 Ohms | - |
| Qg Gate Charge | - | - 0.04 nC | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSD223PH6327XTSA1 | MOSFET P-Ch DPAK-2 | |
| BSD223PH6327XTSA1 | MOSFET 2P-CH 20V 0.39A SOT363 | ||
| BSD223PH6327 | Small Signal Field-Effect Transistor, 0.39A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSD223PH6327. | New and Original | ||
| BSD223PH6327XTSA1-CUT TAPE | New and Original |