 |  | | |
| PartNumber | BSP125H6433XTMA1 | BSP125L6327HTSA1 | BSP125L6433HTMA1 |
| Description | MOSFET N-Ch 600V 120mA SOT-223-3 | MOSFET N-CH 600V 120MA SOT-223 | MOSFET N-CH 600V 120MA SOT-223 |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-223-4 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 120 mA | - | - |
| Rds On Drain Source Resistance | 25 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 6.6 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.8 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.6 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | BSP125 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 3.5 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 60 mS | - | - |
| Fall Time | 110 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 14.4 ns | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 20 ns | - | - |
| Typical Turn On Delay Time | 7.7 ns | - | - |
| Part # Aliases | BSP125 H6433 SP001058578 | - | - |
| Unit Weight | 0.003951 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSP135 H6327 | MOSFET N-Ch 600V 120mA SOT-223-3 | |
| BSP135 H6906 | MOSFET N-Ch 600V 20mA SOT-223-3 | ||
| BSP129H6327XTSA1 | MOSFET N-Ch 240V 350mA SOT-223-3 | ||
| BSP129 H6327 | MOSFET N-Ch 240V 350mA SOT-223-3 | ||
| BSP129 H6906 | MOSFET N-Ch 240V 50mA SOT-223-3 | ||
| BSP129H6906XTSA1 | MOSFET N-Ch 240V 350mA SOT-223-3 | ||
| BSP125L6327HTSA1 | MOSFET N-CH 600V 120MA SOT-223 | ||
| BSP125L6433HTMA1 | MOSFET N-CH 600V 120MA SOT-223 | ||
| BSP129E6327 | MOSFET N-CH 240V 350MA SOT223 | ||
| BSP129H6327XTSA1 | MOSFET N-CH 240V 350MA SOT223 | ||
| BSP129H6906XTSA1 | MOSFET N-CH 240V 350MA SOT223 | ||
| BSP129L6327HTSA1 | MOSFET N-CH 240V 350MA SOT-223 | ||
| BSP129L6906HTSA1 | MOSFET N-CH 240V 350MA SOT-223 | ||
| BSP135 E6327 | MOSFET N-CH 600V 120MA SOT-223 | ||
| BSP129E6327T | MOSFET N-CH 240V 350MA SOT223 | ||
| BSP135 E6906 | MOSFET N-CH 600V 120MA SOT-223 | ||
| BSP125H6433XTMA1 | IGBT Transistors MOSFET N-Ch 600V 120mA SOT-223-3 | ||
Nexperia |
BSP130,115 | MOSFET TAPE-7 MOSFET | |
| BSP126,115 | MOSFET TAPE-7 MOSFET | ||
| BSP126,135 | MOSFET TAPE13 MOSFET | ||
| BSP126,115 | MOSFET N-CH 250V 375MA SOT223 | ||
| BSP130,115 | MOSFET N-CH 300V 350MA SC73 | ||
| BSP126,135 | RF Bipolar Transistors MOSFET TAPE13 MOSFET | ||
| BSP128/1 | INSTOCK | ||
| BSP125L6327 | Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSP125L6327XT | New and Original | ||
| BSP125L6433 | Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSP126 | MOSFET Transistor, N-Channel, SOT-223 | ||
| BSP126 , TEA1533T , D89 | New and Original | ||
| BSP126-115 | New and Original | ||
| BSP126. | New and Original | ||
| BSP126/S911 | New and Original | ||
| BSP126115 | Now Nexperia BSP126 - Power Field-Effect Transistor, 0.35A I(D), 250V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSP127 | New and Original | ||
| BSP128 | New and Original | ||
| BSP129 | DEPLETION MODE MOSFET, 240V, 120mA, SOT-223, Transistor Polarity:N Channel, Continuous Drain Current Id:120mA, Drain Source Voltage Vds:240V, On Resistance Rds(on):20ohm, Rds(on) Test Voltage Vgs | ||
| BSP129 L6906 | New and Original | ||
| BSP129 H6327 | Trans MOSFET N-CH 240V 0.35A Automotive 4-Pin(3+Tab) SOT-223 T/R | ||
| BSP129L6327 | Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSP129L6327XT | New and Original | ||
| BSP129L6906 | Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSP130 | New and Original | ||
| BSP130115 | New and Original | ||
| BSP135 | New and Original | ||
| BSP135 H6327 | MOSFET N-Ch 600V 120mA SOT-223-3 | ||
| BSP135 H6327(SP001058812 | New and Original | ||
| BSP135 L6327 | MOSFET N-Ch 600V 120mA SOT-223-3 | ||
| BSP135 L6906 | MOSFET N-Ch 600V 120mA SOT-223-3 | ||
| BSP129 L6906 | IGBT Transistors MOSFET N-Ch 240V 350mA SOT-223-3 | ||
| BSP129 L6327 | IGBT Transistors MOSFET N-Ch 240V 350mA SOT-223-3 |