 | | | |
| PartNumber | BSZ100N06LS3 G | BSZ100N06LS3GATMA1 | BSZ100N06NS |
| Description | MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3 | MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3 | MOSFET DIFFERENTIATED MOSFETS |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TSDSON-8 | PG-TSDSON-8 | PG-TSDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | 60 V |
| Id Continuous Drain Current | 20 A | 20 A | 40 A |
| Rds On Drain Source Resistance | 7.7 mOhms | 10 mOhms | 10 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | 2.1 V |
| Vgs Gate Source Voltage | 20 V | 10 V | 10 V |
| Qg Gate Charge | 45 nC | 34 nC | 12 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 50 W | 50 W | 36 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 1.1 mm | 1.1 mm | 1.1 mm |
| Length | 3.3 mm | 3.3 mm | 3.3 mm |
| Series | OptiMOS 3 | OptiMOS 3 | OptiMOS 5 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 3.3 mm | 3.3 mm | 3.3 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 20 S | 20 S | 16 S |
| Fall Time | 8 ns | 8 ns | 2 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 58 ns | 58 ns | 2 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 19 ns | 19 ns | 10 ns |
| Typical Turn On Delay Time | 8 ns | 8 ns | 6 ns |
| Part # Aliases | BSZ100N06LS3GATMA1 BSZ1N6LS3GXT SP000453672 | BSZ100N06LS3 BSZ1N6LS3GXT G SP000453672 | BSZ100N06NSATMA1 SP001067006 |
| Unit Weight | 0.003527 oz | 0.002681 oz | 0.001249 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSZ100N06LS3 G | MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3 | |
| BSZ100N06LS3GATMA1 | MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3 | ||
| BSZ100N06NSATMA1 | MOSFET MV POWER MOS | ||
| BSZ100N06NS | MOSFET DIFFERENTIATED MOSFETS | ||
| BSZ100N06NSATMA1 | MOSFET N-CH 60V 40A 8TSDSON | ||
| BSZ100N06LS3GATMA1 | MOSFET N-CH 60V 20A TSDSON-8 | ||
| BSZ100N06L | New and Original | ||
| BSZ100N06LS3 | New and Original | ||
| BSZ100N06LS3 G | BSZ100N06LS3 G | ||
| BSZ100N06LS3G | New and Original | ||
| BSZ100N06LS3GATMA | New and Original | ||
| BSZ100N06NS | MOSFET DIFFERENTIATED MOSFETS | ||
| BSZ100N06NSATMA1-CUT TAPE | New and Original |