 |  | | |
| PartNumber | BSZ15DC02KD H | BSZ15DC02KD | BSZ15DC02KDH |
| Description | MOSFET SMALL SIGNAL+P-CH | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TSDSON-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel, P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 5.1 A, 3.2 A | - | - |
| Rds On Drain Source Resistance | 41 mOhms, 97 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 800 mV, 1.4 V | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Qg Gate Charge | 2.8 nC, - 4.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 2.5 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.1 mm | - | - |
| Length | 3.3 mm | - | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
| Width | 3.3 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 5.5 S, 3.4 S | - | - |
| Fall Time | 1.4 ns, 4.7 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 2 ns, 3.7 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 12.2 ns, 11.3 ns | - | - |
| Typical Turn On Delay Time | 4.9 ns, 7.4 ns | - | - |
| Part # Aliases | BSZ15DC02KDHXTMA1 SP000961028 | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
BSZ15DC02KD H | MOSFET SMALL SIGNAL+P-CH | |
| BSZ15DC02KDHXTMA1 | MOSFET SMALL SIGNAL+P-CH | ||
| BSZ15DC02KDHXTMA1 | MOSFET SMALL SIGNAL+P-CH | ||
| BSZ15DC02KD | New and Original | ||
| BSZ15DC02KD H | MOSFET SMALL SIGNAL+P-CH | ||
| BSZ15DC02KDH | New and Original | ||
| BSZ15DC02KDHXTMA1-CUT TAPE | New and Original |