BTS282ZE3180AA

BTS282ZE3180AATMA2 vs BTS282ZE3180AATMA1 vs BTS282ZE3180AATMA2-CUT TAPE

 
PartNumberBTS282ZE3180AATMA2BTS282ZE3180AATMA1BTS282ZE3180AATMA2-CUT TAPE
DescriptionMOSFET N-Ch 49V 36A D2PAK-6Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
ManufacturerInfineon--
Product CategoryMOSFET--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-7--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage49 V--
Id Continuous Drain Current36 A--
Rds On Drain Source Resistance6.5 mOhms--
Vgs th Gate Source Threshold Voltage1.6 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge155 nC--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation300 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
PackagingReel--
Height4.4 mm--
Length10 mm--
SeriesBTS282--
Transistor Type1 N-Channel--
Width9.25 mm--
BrandInfineon Technologies--
Forward Transconductance Min30 S--
Fall Time36 ns--
Product TypeMOSFET--
Rise Time37 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time70 ns--
Typical Turn On Delay Time30 ns--
Part # AliasesBTS282Z E3180A SP000910848--
Unit Weight0.056438 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
BTS282ZE3180AATMA2 MOSFET N-Ch 49V 36A D2PAK-6
BTS282ZE3180AATMA2 MOSFET N-Ch 49V 36A D2PAK-6
BTS282ZE3180AATMA1 Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BTS282ZE3180AATMA2-CUT TAPE New and Original
Top