 |  | | |
| PartNumber | DMG6602SVT-7 | DMG6602SVT-7,2SK1764KYTR | DMG6602SVT-7-CUT TAPE |
| Description | MOSFET MOSFET BVDSS: 25V-30 5V-30V,TSOT23,3K | ||
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TSOT-26-6 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel, P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 3.4 A, 2.8 A | - | - |
| Rds On Drain Source Resistance | 100 mOhms, 140 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 9 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 840 mW | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Series | DMG6602 | - | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
| Brand | Diodes Incorporated | - | - |
| Forward Transconductance Min | 4 S | - | - |
| Fall Time | 3 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 5 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 13 ns | - | - |
| Typical Turn On Delay Time | 3 ns | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMG6602SVT-7 | MOSFET MOSFET BVDSS: 25V-30 5V-30V,TSOT23,3K | |
| DMG6602SVT-7 | New and Original | ||
| DMG6602SVT-7,2SK1764KYTR | New and Original | ||
| DMG6602SVT-7-F | New and Original | ||
| DMG6602SVT-7-TW | New and Original | ||
| DMG6602SVT-7-CUT TAPE | New and Original |