FQA8N90C

FQA8N90C-F109 vs FQA8N90C

 
PartNumberFQA8N90C-F109FQA8N90C
DescriptionMOSFET 900V N-ChannelMOSFET 900V N-Channel Q-FET
ManufacturerON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleThrough HoleThrough Hole
Package / CaseTO-3PN-3TO-3PN-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage900 V900 V
Id Continuous Drain Current8 A8 A
Rds On Drain Source Resistance1.9 Ohms1.9 Ohms
Vgs Gate Source Voltage30 V30 V
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation240 W240 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
TradenameQFET-
PackagingTubeTube
Height20.1 mm20.1 mm
Length16.2 mm16.2 mm
SeriesFQA8N90C_F109-
Transistor Type1 N-Channel1 N-Channel
Width5 mm5 mm
BrandON Semiconductor / FairchildON Semiconductor / Fairchild
Fall Time70 ns70 ns
Product TypeMOSFETMOSFET
Rise Time110 ns110 ns
Factory Pack Quantity45030
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time70 ns70 ns
Typical Turn On Delay Time40 ns40 ns
Part # AliasesFQA8N90C_F109FQA8N90C_NL
Unit Weight0.225789 oz0.000198 oz
Type-MOSFET
Forward Transconductance Min-5.5 S
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQA8N90C-F109 MOSFET 900V N-Channel
FQA8N90C MOSFET 900V N-Channel Q-FET
ON Semiconductor
ON Semiconductor
FQA8N90C MOSFET N-CH 900V 8A TO-3P
FQA8N90C-F109 MOSFET N-CH 900V 8A TO-3P
FQA8N90C_F109 900V N-CHANNEL MOSFET QFET&#17
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