FQB55N10

FQB55N10TM vs FQB55N10 vs FQB55N10TM-NL

 
PartNumberFQB55N10TMFQB55N10FQB55N10TM-NL
DescriptionMOSFET 100V N-Channel QFETMOSFET, N, D2-PAK, Transistor Polarity:N Channel, Continuous Drain Current Id:55A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.026ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current55 A--
Rds On Drain Source Resistance26 mOhms--
Vgs Gate Source Voltage25 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation3.75 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height4.83 mm--
Length10.67 mm--
SeriesFQB55N10--
Transistor Type1 N-Channel--
TypeMOSFET--
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min38 S--
Fall Time140 ns--
Product TypeMOSFET--
Rise Time250 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time110 ns--
Typical Turn On Delay Time25 ns--
Unit Weight0.046296 oz--
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQB55N10TM MOSFET 100V N-Channel QFET
FQB55N10 MOSFET, N, D2-PAK, Transistor Polarity:N Channel, Continuous Drain Current Id:55A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.026ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage
FQB55N10TM-NL New and Original
FQB55N10TMCT-ND New and Original
ON Semiconductor
ON Semiconductor
FQB55N10TM MOSFET N-CH 100V 55A D2PAK
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