PartNumber | FQI7N10LTU | FQI7N10 | FQI7N10L |
Description | MOSFET 100V N-Ch QFET Logic Level | ||
Manufacturer | ON Semiconductor | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-262-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 100 V | - | - |
Id Continuous Drain Current | 7.3 A | - | - |
Rds On Drain Source Resistance | 275 mOhms | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 3.75 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Tube | - | - |
Height | 7.88 mm | - | - |
Length | 10.29 mm | - | - |
Transistor Type | 1 N-Channel | - | - |
Type | MOSFET | - | - |
Width | 4.83 mm | - | - |
Brand | ON Semiconductor / Fairchild | - | - |
Fall Time | 50 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 100 ns | - | - |
Factory Pack Quantity | 50 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 17 ns | - | - |
Typical Turn On Delay Time | 9 ns | - | - |
Unit Weight | 0.084199 oz | - | - |