| PartNumber | FQP2N90 | FQP2N80 | FQP2P40 |
| Description | MOSFET 900V N-Channel QFET | MOSFET 800V N-Channel QFET | MOSFET 400V P-Channel QFET |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 900 V | 800 V | 400 V |
| Id Continuous Drain Current | 2.2 A | 2.4 A | 2 A |
| Rds On Drain Source Resistance | 7.2 Ohms | 6.3 Ohms | 6.5 Ohms |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 85 W | 85 W | 63 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | QFET | QFET | - |
| Packaging | Tube | Tube | Tube |
| Height | 16.3 mm | 16.3 mm | 16.3 mm |
| Length | 10.67 mm | 10.67 mm | 10.67 mm |
| Series | FQP2N90 | FQP2N80 | QFET |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 P-Channel |
| Type | MOSFET | MOSFET | MOSFET |
| Width | 4.7 mm | 4.7 mm | 4.7 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Forward Transconductance Min | 2 S | 2.65 S | 1.42 S |
| Fall Time | 30 ns | 28 ns | 25 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 35 ns | 30 ns | 33 ns |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 20 ns | 25 ns | 22 ns |
| Typical Turn On Delay Time | 15 ns | 12 ns | 9 ns |
| Part # Aliases | FQP2N90_NL | FQP2N80_NL | - |
| Unit Weight | 0.063493 oz | 0.063493 oz | 0.050717 oz |