PartNumber | IGT40R070D1E8220ATMA1 | IGT60R070D1ATMA1 | IGT60R190D1SATMA1 |
Description | Bipolar Transistors - BJT | MOSFET 600V CoolGaN Power Transistor | MOSFET 600V CoolGaN Power Transistor |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | Bipolar Transistors - BJT | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Packaging | Reel | Reel | Reel |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Product Type | BJTs - Bipolar Transistors | MOSFET | MOSFET |
Factory Pack Quantity | 2000 | 2000 | 2000 |
Subcategory | Transistors | MOSFETs | MOSFETs |
Part # Aliases | E8220 IGT40R070D1 SP001946158 | SP001300364 | SP001701702 |
Technology | - | GaN | GaN |
Mounting Style | - | SMD/SMT | SMD/SMT |
Package / Case | - | PG-HSOF-8 | PG-HSOF-8 |
Number of Channels | - | 1 Channel | 1 Channel |
Transistor Polarity | - | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | - | 600 V | 600 V |
Id Continuous Drain Current | - | 31 A | 12.5 A |
Rds On Drain Source Resistance | - | 70 mOhms | 190 mOhms |
Vgs th Gate Source Threshold Voltage | - | 0.9 V | 0.9 V |
Vgs Gate Source Voltage | - | 10 V | 10 V |
Qg Gate Charge | - | 5.8 nC | 3.2 nC |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Pd Power Dissipation | - | 125 W | 55.5 W |
Configuration | - | Single | Single |
Channel Mode | - | Enhancement | Enhancement |
Tradename | - | CoolGaN | CoolGaN |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Fall Time | - | 13 ns | 12 ns |
Rise Time | - | 8 ns | 5 ns |
Typical Turn Off Delay Time | - | 13 ns | 12 ns |
Typical Turn On Delay Time | - | 12 ns | 11 ns |