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IPB03

IPB036N12N3GATMA1 vs IPB037N06N3GATMA1 vs IPB037N06N3 G

 
PartNumberIPB036N12N3GATMA1IPB037N06N3GATMA1IPB037N06N3 G
DescriptionMOSFET N-Ch 120V 180A D2PAK-6 OptiMOS 3MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-263-7TO-263-3TO-263-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage120 V60 V60 V
Id Continuous Drain Current180 A90 A90 A
Rds On Drain Source Resistance2.9 mOhms3 mOhms3 mOhms
Vgs th Gate Source Threshold Voltage2 V2 V2 V
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge211 nC98 nC98 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
Pd Power Dissipation300 W188 W188 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameOptiMOSOptiMOSOptiMOS
PackagingReelReelReel
Height4.4 mm4.4 mm4.4 mm
Length10 mm10 mm10 mm
SeriesOptiMOS 3OptiMOS 3OptiMOS 3
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width9.25 mm9.25 mm9.25 mm
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Forward Transconductance Min98 S61 S61 S
Fall Time21 ns5 ns5 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time52 ns70 ns70 ns
Factory Pack Quantity100010001000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time76 ns40 ns40 ns
Typical Turn On Delay Time35 ns30 ns30 ns
Part # AliasesG IPB036N12N3 IPB36N12N3GXT SP000675204G IPB037N06N3 IPB37N6N3GXT SP000397986IPB037N06N3GATMA1 IPB37N6N3GXT SP000397986
Unit Weight0.063846 oz0.139332 oz0.139332 oz
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies 		IPB039N10N3 G MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3
IPB036N12N3GATMA1 MOSFET N-Ch 120V 180A D2PAK-6 OptiMOS 3
IPB038N12N3GATMA1 MOSFET N-Ch 120V 120A D2PAK-2 OptiMOS 3
IPB038N12N3 G MOSFET N-Ch 120V 120A D2PAK-2 OptiMOS 3
IPB037N06N3GATMA1 MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
IPB037N06N3 G MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
IPB039N10N3GATMA1 MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3
IPB039N10N3GE8187ATMA1 MOSFET MV POWER MOS
IPB037N06N3GATMA1 MOSFET N-CH 60V 90A TO263-3
IPB039N10N3GE8187ATMA1 MOSFET N-CH 100V 160A TO263-7
IPB036N12N3GATMA1 MOSFET N-CH 120V 180A TO263-7
IPB039N10N3GATMA1 MOSFET N-CH 100V 160A TO263-7
IPB03N03LA G MOSFET N-CH 25V 80A TO-263
IPB03N03LB MOSFET N-CH 30V 80A D2PAK
IPB03N03LB G MOSFET N-CH 30V 80A TO-263
IPB038N12N3 G Trans MOSFET N-CH 120V 120A 3-Pin(2+Tab) TO-263
IPB038N12N3GATMA1 MOSFET N-CH 120V 120A TO263-3
IPB039N04LGATMA1 MOSFET N-CH 40V 80A TO263-3
IPB03N03LA MOSFET N-CH 25V 80A D2PAK
IPB037N06N3 G Darlington Transistors MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
IPB039N10N3 G IGBT Transistors MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3
IPB036N12N3-G INSTOCK
IPB039N10N3GXT Trans MOSFET N-CH 100V 160A 7-Pin(6+Tab) TO-263 T/R - Tape and Reel (Alt: IPB039N10N3GATMA1)
IPB036N12N3G 180 A, 120 V, 0.0036 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-263
IPB036N12N3GTR New and Original
IPB038N12N3G MOSFET, N-CH, 120V, 120A, TO263-3
IPB038N12N3G 038N12N New and Original
IPB038N12N3G , 2SD1858TV New and Original
IPB039N04LG New and Original
IPB039N04LGS New and Original
IPB039N10N3G Power Field-Effect Transistor, 160A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA
IPB039N10N3GATMA New and Original
IPB039N10N3GATMA1 , 2SD1 New and Original
IPB039N10N3GE818XT RF Bipolar Transistors MOSFET N-Ch 40V 80A D2PAK-2
IPB037N06N3 New and Original
IPB037N06N3G Trans MOSFET N-CH 60V 90A 3-Pin TO-263 T/R (Alt: SP000397986)
IPB039N04L G MOSFET N-Ch 40V 80A D2PAK-2
IPB039N10N3GE8197ATMA1 New and Original
IPB03N03LAG Power Field-Effect Transistor, 80A I(D), 25V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IPB03N03LBG MOSFET N-Ch 30V 80A D2PAK-2
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