IPB039N10N3GATMA1

Mfr. #:: IPB039N10N3GATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-CH 100V 160A TO263-7
Lifecycle:: New from this manufacturer.
Datasheet:: IPB039N10N3GATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer: Infineon Technologies

Product Category: Transistors - FETs, MOSFETs - Single

Series: XPB039N10

Packaging: Reel

Part-Aliases: G IPB039N10N3 IPB039N10N3GXT SP000482428

Tradename: OptiMOS

Package-Case: TO-263-7

Technology: Si

Number-of-Channels: 1 Channel

Transistor-Type: 1 N-Channel

Transistor-Polarity: N-Channel

Tags: IPB039N10N3GA, IPB039N1, IPB039, IPB03, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB039N10N3GATMA1 Description

***ark: MOSFET, N-CH, 100V, 160A, TO263-7; Transistor Polarity:N Channel; Continuous Dra

***p One Stop Japan: Trans MOSFET N-CH 100V 160A Automotive 7-Pin(6+Tab) D2PAK T/R

***ure Electronics: Single N-Channel 100 V 3.9 mOhm 88 nC OptiMOS Power Mosfet - D2PAK-7

***ineon SCT: Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO263-7, RoHS

***nell: MOSFET, N-CH, 100V, 160A, TO263-7; Transistor Polarity:N Channel; Continuous Drain Current Id:160A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0033ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; Power Dissipation Pd:214W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:7; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C

***ineon: The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

Market price

Part #	Mfg.	Description	Stock	Price
IPB039N10N3GATMA1 DISTI # IPB039N10N3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 100V 160A TO263-7 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	On Order	1000:$1.4355
IPB039N10N3GATMA1 DISTI # IPB039N10N3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 100V 160A TO263-7 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	500:$1.7845 100:$2.2943 10:$2.8550 1:$3.1600
IPB039N10N3GATMA1 DISTI # IPB039N10N3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 100V 160A TO263-7 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	500:$1.7845 100:$2.2943 10:$2.8550 1:$3.1600
IPB039N10N3GXT DISTI # IPB039N10N3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 100V 160A 7-Pin(6+Tab) TO-263 T/R - Tape and Reel (Alt: IPB039N10N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$1.0369 2000:$0.9999 4000:$0.9629 6000:$0.9309 10000:$0.9139
IPB039N10N3GATMA1 DISTI # 47W3465	Infineon Technologies AG	MOSFET, N CHANNEL, 100V, 160A, TO263-7,Transistor Polarity:N Channel,Continuous Drain Current Id:160A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0033ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V RoHS Compliant: Yes	0	1:$2.6500 10:$2.2500 100:$1.8000 500:$1.5800
IPB039N10N3 G DISTI # 726-IPB039N10N3G	Infineon Technologies AG	MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3 RoHS: Compliant	37	1:$2.6500 10:$2.2500 100:$1.8000 500:$1.5800 1000:$1.3100
IPB039N10N3GATMA1 DISTI # 726-IPB039N10N3GATMA	Infineon Technologies AG	MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3 RoHS: Compliant	31	1:$2.6500 10:$2.2500 100:$1.8000 500:$1.5800 1000:$1.3100
IPB039N10N3GATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 160A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA RoHS: Compliant	21	1000:$1.2700 500:$1.3300 100:$1.3900 25:$1.4500 1:$1.5600
IPB039N10N3GATMA1 DISTI # 2212838	Infineon Technologies AG	MOSFET, N-CH, 100V, 160A, TO263-7 RoHS: Compliant	0	1:$4.1900 10:$3.5600 100:$2.8500 500:$2.5000 1000:$2.0700
IPB039N10N3GATMA1 DISTI # 2212838	Infineon Technologies AG	MOSFET, N-CH, 100V, 160A, TO263-7 RoHS: Compliant	10	1:£2.0700 10:£1.6600 100:£1.3100 250:£1.2600 500:£1.2000

Related products

Image	Part #	Description
	Mfr.#: IPB039N10N3 G OMO.#: OMO-IPB039N10N3-G	MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3
	Mfr.#: IPB039N10N3GE8187ATMA1 OMO.#: OMO-IPB039N10N3GE8187ATMA1	MOSFET MV POWER MOS
	Mfr.#: IPB039N10N3GE8187ATMA1 OMO.#: OMO-IPB039N10N3GE8187ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 160A TO263-7
	Mfr.#: IPB039N10N3GATMA1 OMO.#: OMO-IPB039N10N3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 100V 160A TO263-7
	Mfr.#: IPB039N10N3GXT OMO.#: OMO-IPB039N10N3GXT-1190	Trans MOSFET N-CH 100V 160A 7-Pin(6+Tab) TO-263 T/R - Tape and Reel (Alt: IPB039N10N3GATMA1)
	Mfr.#: IPB039N10N3G OMO.#: OMO-IPB039N10N3G-1190	Power Field-Effect Transistor, 160A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA
	Mfr.#: IPB039N10N3GATMA OMO.#: OMO-IPB039N10N3GATMA-1190	New and Original
	Mfr.#: IPB039N10N3GE8197ATMA1 OMO.#: OMO-IPB039N10N3GE8197ATMA1-1190	New and Original
	Mfr.#: IPB039N10N3 G OMO.#: OMO-IPB039N10N3-G-126	IGBT Transistors MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3
	Mfr.#: IPB039N10N3GE818XT OMO.#: OMO-IPB039N10N3GE818XT-317	RF Bipolar Transistors MOSFET N-Ch 40V 80A D2PAK-2

Availability

Stock:: Available
On Order:: 1000
Enter Quantity:

Current price of IPB039N10N3GATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.73~~; ~~$1.73~~

10: ~~$1.64~~; ~~$16.42~~

100: ~~$1.56~~; ~~$155.51~~

500: ~~$1.47~~; ~~$734.35~~

1000: ~~$1.38~~; ~~$1 382.30~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IPB039N10N3GATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes