 |  | | |
| PartNumber | IPB039N10N3 G | IPB039N10N3GATMA1 | IPB039N10N3GE8187ATMA1 |
| Description | MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3 | MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3 | MOSFET MV POWER MOS |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PG-TO-263-7 | TO-263-3 | TO-263-7 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 160 A | 160 A | - |
| Rds On Drain Source Resistance | 3.9 mOhms | 3.3 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 10 V | 20 V | - |
| Qg Gate Charge | 88 nC | 117 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 214 W | 214 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Series | OptiMOS 3 | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | OptiMOS 3 Power-Transistor | - | - |
| Width | 9.25 mm | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 76 S | 76 S | - |
| Fall Time | 14 ns | 14 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 59 ns | 59 ns | - |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 48 ns | 48 ns | - |
| Typical Turn On Delay Time | 27 ns | 27 ns | - |
| Part # Aliases | IPB039N10N3GATMA1 IPB39N1N3GXT SP000482428 | G IPB039N10N3 IPB39N1N3GXT SP000482428 | E8187 G IPB039N10N3 IPB39N1N3GE8187XT SP000939340 |
| Unit Weight | 0.056438 oz | 0.063846 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB039N10N3 G | MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3 | |
| IPB039N10N3GATMA1 | MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3 | ||
| IPB039N10N3GE8187ATMA1 | MOSFET MV POWER MOS | ||
| IPB039N10N3GE8187ATMA1 | MOSFET N-CH 100V 160A TO263-7 | ||
| IPB039N10N3GATMA1 | MOSFET N-CH 100V 160A TO263-7 | ||
| IPB039N10N3GXT | Trans MOSFET N-CH 100V 160A 7-Pin(6+Tab) TO-263 T/R - Tape and Reel (Alt: IPB039N10N3GATMA1) | ||
| IPB039N10N3G | Power Field-Effect Transistor, 160A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA | ||
| IPB039N10N3GATMA | New and Original | ||
| IPB039N10N3GATMA1 , 2SD1 | New and Original | ||
| IPB039N10N3GE8197ATMA1 | New and Original | ||
| IPB039N10N3 G | IGBT Transistors MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3 | ||
| IPB039N10N3GE818XT | RF Bipolar Transistors MOSFET N-Ch 40V 80A D2PAK-2 |